AD8512A

更新时间： 2024-01-25 08:13:43

品牌	Logo	应用领域
亚德诺 - ADI		运算放大器
页数	文件大小	规格书
58页	6724K
描述
Operational Amplifiers Selection Guide

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AD8512A 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.31.00.01	风险等级：	0.89
放大器类型：	OPERATIONAL AMPLIFIER	架构：	VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：	0.01 µA	25C 时的最大偏置电流 (IIB)：	0.00008 µA
标称共模抑制比：	100 dB	频率补偿：	YES
最大输入失调电压：	800 µV	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.9 mm
低-偏置：	YES	低-失调：	YES
微功率：	NO	湿度敏感等级：	1
负供电电压上限：	-18 V	标称负供电电压 (Vsup)：	-5 V
功能数量：	2	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
功率：	NO	电源：	+-5/+-15 V
可编程功率：	NO	认证状态：	Not Qualified
座面最大高度：	1.75 mm	标称压摆率：	20 V/us
子类别：	Operational Amplifier	最大压摆率：	5 mA
供电电压上限：	18 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	JFET
温度等级：	AUTOMOTIVE	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	30
标称均一增益带宽：	8000 kHz	宽带：	NO
宽度：	3.9 mm	Base Number Matches：	1

AD8512A 数据手册

Amplifier Process and Trimming Technology

JFET Input Amplifiers

Process Technology

Bipolar

JFET input amplifiers have the advantage over bipolar devices by having

an extremely high input impedance along with low noise performance,

making them very useful in amplifier circuits using very small signals

such as high source impedance sensors and photodiodes. A typical JFET

has a voltage noise slightly larger than a BJT, but its current noise is

significantly lower.

Bipolar technology delivers the best overall performance amplifiers. It

offers high output current drive, high voltage operation, and low noise.

Extremely Fast Complementary Bipolar (XFCB 1.5)

Analog Device’s XFCB 1.5 technology is a suite of advanced bipolar

fabrication processes that features dielectric isolation, high speed

complementary NPNs and PNPs with 3 GHz to 8 GHz frequency transition,

precision capacitors, and low temperature-coefficient thin film resistors

that can be trimmed at the wafer level. Dielectric isolation allows much

tighter spacing between components and removes the possibility of latch-

up. Nonlinear device-to-substrate capacitance that limits device speed and

distortion performance is eliminated. XFCB1.5 has supply voltage options

from 8 V to 26 V; this allows the selection of the fastest devices possible

for the required input and output voltage ranges.

Trimming Technology

Laser Trim

When extremely fine adjustment is required, laser trimming is most

effective. By controlling the path and speed of the laser beam, the

resistor’s value can be adjusted to very precise values. Analog Devices

pioneered the use of thin film resistors and laser trimming and uses

this technology extensively in precision amplifiers, references,

and converters.

XFCB3

Zener Zapping

Analog Devices’ XFCB3 technology features full dielectric isolation, silicon-

germanium hetero-junction NPNs with frequency transition up to 50 GHz

and double-poly PNPs with frequency transition up to 18 GHz, precision

capacitors, and low temperature coefficient thin film resistors. Minimum

feature size is a factor of three less than XFCB1.5. This process family has

enabled a new generation of high speed, ultralow distortion differential

amplifiers and op amps.

With each zap removing a predefined resistance value, the nature of

the trims is discrete. It is most cost-effective for fairly large geometry

processes. Analog Devices pioneered the use of Zener-zap trimming and

created the industry standard OP07 precision amplifier.

DigiTrim

Analog Devices’ DigiTrim^™is a patented in-package trimming process that

delivers guaranteed high accuracy. This in-package process technology

eliminates the need for laser trimming during manufacturing and

minimizes the input offset of operational amplifiers.

36 V iPolar

Analog Devices’ iPolar^™36 V precision bipolar process is highly optimized

for linear circuits, yielding new levels of performance, size, and value. The

iPolar process combines the advantages of precision bipolar and JFET

with lateral dielectric isolation and modular processing. The transistors

on iPolar devices have been redesigned from the ground up and are

optimized for speed, noise, matching, linearity, and stability at lower power

levels. This enables greater signal chain integration without compromising

performance.

16 V iCMOS Amplifiers

Analog Devices’ iCMOS^®industrial manufacturing process technology

combines submicron CMOS with high voltage complementary bipolar

technologies. It enables the development of a wide range of high

performance analog ICs capable of 30 V operation in a smaller footprint.

Unlike analog ICs using conventional CMOS processes, iCMOS components

can tolerate high supply voltages, while providing increased performance,

dramatically lower power consumption, and reduced package size. iCMOS

components tolerate high voltages (greater than 6 V regular CMOS amps)

while employing digital design techniques such as auto-zero and DigiTrim

technologies.

Operational Ampliﬁer Selection Guide

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与AD8512A相关器件

型号	品牌	描述	获取价格	数据表
AD8512AR	ADI	Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi	获取价格
AD8512AR	ROCHESTER	DUAL OP-AMP, 1800 uV OFFSET-MAX, 8 MHz BAND WIDTH, PDSO8, MS-012AA, SOIC-8	获取价格
AD8512ARM-R2	ADI	Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi	获取价格
AD8512ARM-REEL	ADI	Precision, Very Low Noise, Low Input Bias Current, Wide Bandwidth JFET Operational Amplifi	获取价格
AD8512ARMZ	ADI	Precision, Very Low Noise, Low Input Bias Current	获取价格
AD8512ARMZ	ROCHESTER	DUAL OP-AMP, 1800uV OFFSET-MAX, 8MHz BAND WIDTH, PDSO8, ROHS COMPLIANT, MO-187AA, MSOP-8	获取价格

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