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AD8231ACPZ-R7 PDF预览

AD8231ACPZ-R7

更新时间: 2024-01-25 18:59:17
品牌 Logo 应用领域
亚德诺 - ADI 仪表放大器放大器电路
页数 文件大小 规格书
20页 621K
描述
Zero Drift, Digitally Programmable Instrumentation Amplifier

AD8231ACPZ-R7 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFN
包装说明:HVQCCN,针数:16
Reach Compliance Code:unknown风险等级:5.76
Is Samacsys:N放大器类型:INSTRUMENTATION AMPLIFIER
最大平均偏置电流 (IIB):0.005 µA标称带宽 (3dB):1 MHz
最小共模抑制比:100 dB最大输入失调电流 (IIO):0.0005 µA
最大输入失调电压:15 µVJESD-30 代码:S-XQCC-N16
JESD-609代码:e3长度:4 mm
湿度敏感等级:3最大非线性:0.005%
功能数量:1端子数量:16
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:HVQCCN
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:COMMERCIAL
座面最大高度:1 mm标称压摆率:1.1 V/us
子类别:Instrumentation Amplifier供电电压上限:6 V
标称供电电压 (Vsup):5 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:MATTE TIN
端子形式:NO LEAD端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
宽度:4 mmBase Number Matches:1

AD8231ACPZ-R7 数据手册

 浏览型号AD8231ACPZ-R7的Datasheet PDF文件第4页浏览型号AD8231ACPZ-R7的Datasheet PDF文件第5页浏览型号AD8231ACPZ-R7的Datasheet PDF文件第6页浏览型号AD8231ACPZ-R7的Datasheet PDF文件第8页浏览型号AD8231ACPZ-R7的Datasheet PDF文件第9页浏览型号AD8231ACPZ-R7的Datasheet PDF文件第10页 
AD8231  
ABSOLUTE MAXIMUM RATINGS  
Table 4.  
THERMAL RESISTANCE  
Table 5.  
Parameter  
Rating  
Supply Voltage  
6 V  
Thermal Pad  
θJA  
54  
96  
Unit  
°C/W  
°C/W  
Output Short-Circuit Current  
Input Voltage (Common-Mode)  
Differential Input Voltage  
Storage Temperature Range  
Operational Temperature Range  
Indefinite1  
Soldered to Board  
Not Soldered to Board  
−VS − 0.3 V to +VS + 0.3 V  
−VS − 0.3 V to +VS + 0.3 V  
–65°C to +150°C  
–40°C to +125°C  
The θJA values in Table 5 assume a 4-layer JEDEC standard  
board. If the thermal pad is soldered to the board, then it is  
also assumed it is connected to a plane. θJC at the exposed pad  
is 6.3°C/W.  
Package Glass Transition Temperature 130°C  
ESD (Human Body Model)  
ESD (Charged Device Model)  
ESD (Machine Model)  
1 For junction temperatures between 105°C and 130°C, short-circuit operation  
beyond 1000 hours may impact part reliability.  
1.5 kV  
1.5 kV  
0.2 kV  
Maximum Power Dissipation  
The maximum safe power dissipation for the AD8231 is limited  
by the associated rise in junction temperature (TJ) on the die. At  
approximately 130°C, which is the glass transition temperature,  
the plastic changes its properties. Even temporarily exceeding  
this temperature limit may change the stresses that the package  
exerts on the die, permanently shifting the parametric perform-  
ance of the amplifiers. Exceeding a temperature of 130°C for an  
extended period can result in a loss of functionality.  
Stresses above those listed under Absolute Maximum Ratings  
may cause permanent damage to the device. This is a stress  
rating only; functional operation of the device at these or any  
other conditions above those indicated in the operational  
section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect  
device reliability.  
ESD CAUTION  
Rev. 0 | Page 7 of 20  
 
 
 

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