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AD8132ARM-REEL PDF预览

AD8132ARM-REEL

更新时间： 2024-02-07 02:48:48
品牌 Logo 应用领域
亚德诺 - ADI 放大器
页数 文件大小 规格书
20页 390K
描述
Low-Cost, High-Speed Differential Amplifier

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AD8132ARM-REEL 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOP,针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.31.00.01风险等级：1.67
放大器类型：OPERATIONAL AMPLIFIER最大平均偏置电流 (IIB)：7 µA
标称共模抑制比：70 dB最大输入失调电压：3500 µV
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
长度：4.9 mm湿度敏感等级：1
负供电电压上限：-5.5 V标称负供电电压 (Vsup)：-5 V
功能数量：1端子数量：8
最高工作温度：125 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：1.75 mm标称压摆率：1200 V/us
子类别：Operational Amplifier供电电压上限：5.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：BIPOLAR温度等级：AUTOMOTIVE
端子面层：Matte Tin (Sn)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：30宽度：3.9 mm
Base Number Matches：1

AD8132ARM-REEL 数据手册

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AD8132  
AD8132–SPECIFICATIONS (@ 25ꢃC, VS = 5 V, VOCM = 2.5 V, G = 1, RL,dm = 499 ꢁ, RF = RG = 348 ꢁ unless  
otherwise noted. For G = 2, RL,dm = 200 ꢁ, RF = 1000 ꢁ, RG = 499 ꢁ. Refer to TPC 1 and TPC 10 for test setup and label descriptions. All  
specifications refer to single-ended input and differential outputs unless otherwise noted.)  
P
arameter  
Conditions  
Min  
Typ  
Max  
Unit  
ꢂDIN to ꢂOUT Specifications  
DYNAMIC PERFORMANCE  
–3 dB Large Signal Bandwidth  
VOUT = 2 V p-p  
VOUT = 2 V p-p, G = 2  
VOUT = 0.2 V p-p  
VOUT = 0.2 V p-p, G = 2  
VOUT = 0.2 V p-p  
VOUT = 0.2 V p-p, G = 2  
VOUT = 2 V p-p  
0.1%, VOUT = 2 V p-p  
250  
300  
180  
360  
155  
65  
50  
1000  
20  
MHz  
MHz  
MHz  
MHz  
MHz  
MHz  
V/µs  
ns  
–3 dB Small Signal Bandwidth  
Bandwidth for 0.1 dB Flatness  
Slew Rate  
Settling Time  
800  
Overdrive Recovery Time  
VIN = 2.5 V to 0 V Step, G = 2  
5
ns  
NOISE/HARMONIC PERFORMANCE  
Second Harmonic  
VOUT = 2 V p-p, 1 MHz, RL,dm = 800 Ω  
VOUT = 2 V p-p, 5 MHz, RL,dm = 800 Ω  
VOUT = 2 V p-p, 20 MHz, RL,dm = 800 Ω  
VOUT = 2 V p-p, 1 MHz, RL,dm = 800 Ω  
VOUT = 2 V p-p, 5 MHz, RL,dm = 800 Ω  
VOUT = 2 V p-p, 20 MHz, RL,dm = 800 Ω  
20 MHz, RL,dm = 800 Ω  
–97  
–100  
–74  
–100  
–99  
–67  
–76  
40  
8
1.8  
0.025  
0.15  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBm  
nV/√Hz  
pA/√Hz  
%
Third Harmonic  
IMD  
IP3  
20 MHz, RL,dm = 800 Ω  
Input Voltage Noise (RTI)  
Input Current Noise  
Differential Gain Error  
Differential Phase Error  
f = 0.1 MHz to 100 MHz  
f = 0.1 MHz to 100 MHz  
NTSC, G = 2, RL,dm = 150 Ω  
NTSC, G = 2, RL,dm = 150 Ω  
Degree  
INPUT CHARACTERISTICS  
Offset Voltage (RTI)  
VOS,dm = VOUT,dm/2; VDIN+ = VDIN– = VOCM = 2.5 V  
TMIN to TMAX Variation  
1.0  
3.5  
7
mV  
µV/°C  
µA  
MΩ  
MΩ  
pF  
6
3
Input Bias Current  
Input Resistance  
Differential  
Common-Mode  
10  
3
1
Input Capacitance  
Input Common-Mode Voltage  
CMRR  
–1 to +4  
–70  
V
dB  
∆VOUT,dm/∆VIN,cm; ∆VIN,cm  
=
1 V;  
–60  
Resistors Matched to 0.01%  
OUTPUT CHARACTERISTICS  
Output Voltage Swing  
Output Current  
Maximum ∆VOUT; Single-Ended Output  
∆VOUT,cm/∆VOUT,dm; ∆VOUT,dm = 1 V  
1 to 3.7  
50  
–68  
V
mA  
dB  
Output Balance Error  
VOCM to ꢂOUT Specifications  
DYNAMIC PERFORMANCE  
–3 dB Bandwidth  
Slew Rate  
∆VOCM = 600 mV p-p  
∆VOCM = 1.5 V to 3.5 V  
210  
340  
MHz  
V/µs  
DC PERFORMANCE  
Input Voltage Range  
Input Resistance  
Input Offset Voltage  
Input Bias Current  
VOCM CMRR  
1 to 3.7  
130  
5
0.5  
–66  
V
kΩ  
mV  
µA  
dB  
VOS,cm = VOUT,cm; VDIN+ = VDIN– = VOCM = 2.5 V  
11  
[∆VOUT,dm/∆VOCM]; ∆VOCM = 2.5 1 V;  
Resistors Matched to 0.01%  
Gain  
∆VOUT,cm/∆VOCM; ∆VOCM = 2.5 1 V  
0.985  
1
1.015  
V/V  
POWER SUPPLY  
Operating Range  
Quiescent Current  
2.7  
9.4  
11  
12  
V
VDIN+ = VDIN– = VOCM = 2.5 V  
TMIN to TMAX Variation  
∆VOUT,dm/∆VS; ∆VS = 1 V  
10.7  
10  
–70  
mA  
µA/°C  
dB  
Power Supply Rejection Ratio  
–60  
OPERATING TEMPERATURE RANGE  
–40  
+85  
°C  
Specifications subject to change without notice.  
–3–  
REV. 0  
1234567...20

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