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AD660

更新时间： 2024-01-19 22:16:39
品牌 Logo 应用领域
亚德诺 - ADI /
页数 文件大小 规格书
12页 428K
描述
Monolithic 16-Bit Serial/Byte DACPORT

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AD660 技术参数

Source Url Status Check Date：2013-05-01 14:56:15.802是否无铅： 含铅
是否Rohs认证： 不符合生命周期：Active
零件包装代码：DIP包装说明：DIP, DIP24,.3
针数：24Reach Compliance Code：not_compliant
ECCN代码：3A001.A.2.CHTS代码：8542.39.00.01
风险等级：5.16Is Samacsys：N
最大模拟输出电压：10 V最小模拟输出电压：-10 V
转换器类型：D/A CONVERTER输入位码：BINARY
输入格式：SERIAL, PARALLEL, 8 BITSJESD-30 代码：R-GDIP-T24
JESD-609代码：e0最大线性误差 (EL)：0.0061%
标称负供电电压：-15 V位数：16
功能数量：1端子数量：24
最高工作温度：125 °C最低工作温度：-55 °C
封装主体材料：CERAMIC, GLASS-SEALED封装代码：DIP
封装等效代码：DIP24,.3封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT APPLICABLE
电源：5,+-15 V认证状态：Not Qualified
座面最大高度：5.08 mm最大稳定时间：13 µs
标称安定时间 (tstl)：2.5 µs子类别：Other Converters
最大压摆率：18 mA标称供电电压：15 V
表面贴装：NO技术：BICMOS
温度等级：MILITARY端子面层：Tin/Lead (Sn63Pb37)
端子形式：THROUGH-HOLE端子节距：2.54 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT APPLICABLE
宽度：7.62 mmBase Number Matches：1

AD660 数据手册

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AD660  
AC PERFORMANCE CHARACTERISTICS (With the exception of Total Harmonic Distortion + Noise and Signal-to-Noise  
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.  
T
MIN ≤ TA ≤ TMAX, VCC = +15 V, VEE = –15 V, VLL = +5 V except where noted.)  
Parameter  
Limit  
Units  
Test Conditions/Comments  
Output Settling Time  
(Time to ±0.0008% FS  
with 2 kΩ, 1000 pF Load)  
13  
8
10  
6
8
2.5  
µs max  
µs typ  
µs typ  
µs typ  
µs typ  
µs typ  
20 V Step, TA = +25°C  
20 V Step, TA = +25°C  
20 V Step, TMIN ≤ TA ≤ TMAX  
10 V Step, TA = +25°C  
10 V Step, TMIN ≤ TA ≤ TMAX  
1 LSB Step, TMIN ≤ TA ≤ TMAX  
Total Harmonic Distortion + Noise  
A, B, S Grade  
A, B, S Grade  
0.009  
0.056  
5.6  
% max  
% max  
% max  
0 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25°C  
–20 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25°C  
–60 dB, 990.5 Hz; Sample Rate = 96 kHz; TA = +25°C  
A, B, S Grade  
Signal-to-Noise Ratio  
83  
15  
2
dB min  
TA = +25°C  
Digital-to-Analog Glitch Impulse  
Digital Feedthrough  
nV-s typ  
nV-s typ  
nV/√Hz typ  
DAC Alternately Loaded with 8000H and 7FFFH  
DAC Alternately Loaded with 0000H and FFFFH; CS High  
Measured at VOUT; 20 V Span; Excludes Reference  
Output Noise Voltage  
120  
Density (1 kHz – 1 MHz)  
Reference Noise  
125  
nV/√Hz typ  
Measured at REF OUT  
Specifications subject to change without notice.  
CAUTION  
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily  
accumulate on the human body and test equipment and can discharge without detection.  
Although the AD660 features proprietary ESD protection circuitry, permanent damage may  
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD  
precautions are recommended to avoid performance degradation or loss of functionality.  
WARNING!  
ESD SENSITIVE DEVICE  
PIN CONFIGURATION  
ABSOLUTE MAXIMUM RATINGS*  
VCC to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V  
–V  
+V  
1
2
24  
23  
22  
21  
REF OUT  
REF IN  
V
V
EE to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V  
LL to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V  
EE  
CC  
AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1 V  
Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to  
+7.0 V  
SPAN,  
BIPOLAR OFFSET  
+V  
3
LL  
V
DGND  
4
OUT  
REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10.5 V  
Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . . ±10.5 V  
Ref Out, VOUT . . . . . . . Indefinite Short to AGND, DGND,  
DB7, 15  
DB6, 14  
DB5, 13  
DB4, 12  
DB3, 11  
DB2, 10  
5
20 AGND  
AD660  
TOP VIEW  
(Not to Scale)  
19  
18  
6
LDAC  
CLR  
7
V
CC, VEE, and VLL  
Power Dissipation (Any Package)  
8
17 SER  
To +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000 mW  
Derates above +60°C . . . . . . . . . . . . . . . . . . . . 8.7 mW/°C  
Storage Temperature . . . . . . . . . . . . . . . . . . .–65°C to +150°C  
Lead Temperature Range  
9
16 HBE  
10  
15 LBE, UNI/BIP CLEAR  
14  
DB1, 9, MSB/LSB 11  
DB0, 8, SIN 12  
CS  
(Soldering 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C  
13  
S
OUT  
*Stresses above those listed under “Absolute Maximum Ratings” may cause  
permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in  
the operational section of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect device reliability.  
REV. A  
–3–  
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