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AD5262BRU50 PDF预览

AD5262BRU50

更新时间: 2024-01-24 04:51:36
品牌 Logo 应用领域
亚德诺 - ADI 电位器
页数 文件大小 规格书
20页 841K
描述
1-/2-Channel 15 V Digital Potentiometers

AD5262BRU50 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP,针数:16
Reach Compliance Code:unknown风险等级:5.83
其他特性:IT CAN ALSO OPERATE FROM A SINGLE 4.5V TO 16.5V SUPPLY; ALSO REQUIRES A +2.7V TO +5.5V LOGIC SUPPLY标称带宽:0.13 kHz
控制接口:3-WIRE SERIAL转换器类型:DIGITAL POTENTIOMETER
JESD-30 代码:R-PDSO-G16JESD-609代码:e0
长度:5 mm湿度敏感等级:1
标称负供电电压:-5 V功能数量:2
位置数:256端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度(摄氏度):240认证状态:COMMERCIAL
电阻定律:LINEAR最大电阻容差:30%
最大电阻器端电压:5 V最小电阻器端电压:-5 V
座面最大高度:1.2 mm标称供电电压:5 V
表面贴装:YES标称温度系数:35 ppm/ °C
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称总电阻:50000 Ω宽度:4.4 mm
Base Number Matches:1

AD5262BRU50 数据手册

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AD5260/AD5262  
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
Unit  
INTERFACE TIMING CHARACTERISTICS apply to all parts6, 12  
Clock Frequency  
Input Clock Pulsewidth  
Data Setup Time  
fCLK  
CH, tCL  
tDS  
25  
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
t
Clock level high or low  
20  
10  
10  
1
Data Hold Time  
tDH  
tPD  
tCSS  
tCSW  
tRS  
CLK to SDO Propagation Delay13  
CS Setup Time  
RL = 1 k, CL < 20pF  
160  
5
CS High Pulsewidth  
Reset Pulsewidth  
20  
50  
0
CLK Fall to CS Rise Hold Time  
CS Rise to Clock Rise Setup  
tCSH  
tCS1  
10  
ns  
NOTES  
The AD5260/AD5262 contains 1,968 transistors. Die Size: 89 mil. × 105 mil. 9,345 sq. mil.  
1Typicals represent average readings at 25°C and VDD = +5 V, VSS = –5 V.  
2Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions.  
R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. IW = VDD/R for both VDD = +5 V, VSS = –5 V.  
3VAB = VDD, Wiper (VW) = No connect.  
4INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. VA = VDD and VB = 0V. DNL  
specification limits of 1 LSB maximum are Guaranteed Monotonic operating conditions.  
5Resistor terminals A, B, W have no limitations on polarity with respect to each other.  
6Guaranteed by design and not subject to production test.  
7Measured at the Ax terminals. All Ax terminals are open-circuit in shutdown mode.  
8Worst-case supply current consumed when input all logic-input levels set at 2.4 V, standard characteristic of CMOS logic.  
9PDISS is calculated from (IDD ϫ VDD). CMOS logic level inputs result in minimum power dissipation.  
10 All dynamic characteristics use VDD = +5 V, VSS = –5 V, VL = +5 V.  
11 Measured at a VW pin where an adjacent VW pin is making a full-scale voltage change.  
12 See timing diagram for location of measured values. All input control voltages are specified with tR = tF = 2ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V.  
Switching characteristics are measured using VL = 5 V.  
13 Propagation delay depends on value of VDD, RL, and CL.  
Specifications subject to change without notice.  
ABSOLUTE MAXIMUM RATINGS1  
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . 300°C  
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215°C  
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C  
Thermal Resistance3 θ JA  
(TA = 25°C, unless otherwise noted.)  
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +15 V  
V
SS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, –7 V  
TSSOP-14 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206°C/W  
TSSOP-16 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150°C/W  
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 V  
VA, VB, VW to GND . . . . . . . . . . . . . . . . . . . . . . . . . . VSS, VDD  
AX – BX, AX – WX, BX – WX  
NOTES  
1Stresses above those listed under Absolute Maximum Ratings may cause permanent  
damage to the device. This is a stress rating only; functional operation of the device  
at these or any other conditions above those listed in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
Intermittent2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA  
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 mA  
Digital Inputs and Output Voltage to GND . . . . . . . 0 V, 7 V  
Operating Temperature Range . . . . . . . . . . . . –40°C to +85°C  
Maximum Junction Temperature (TJ MAX) . . . . . . . . . . . 150°C  
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C  
2Maximum terminal current is bounded by the maximum current handling of the  
switches, maximum power dissipation of the package, and maximum applied  
voltage across any two of the A, B, and W terminals at a given resistance setting.  
3Package Power Dissipation = (TJ MAX – TA)/θ JA  
–3–  
REV. 0  

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