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AD5160BRJZ10-RL7 PDF预览

AD5160BRJZ10-RL7

更新时间: 2024-02-02 09:56:47
品牌 Logo 应用领域
亚德诺 - ADI 转换器数字电位计电阻器光电二极管PC
页数 文件大小 规格书
16页 467K
描述
256-Position SPI-Compatible Digital Potentiometer

AD5160BRJZ10-RL7 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:LSSOP, TSSOP8,.1针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.11
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/242712.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=242712
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=2427123D View:https://componentsearchengine.com/viewer/3D.php?partID=242712
Samacsys PartID:242712Samacsys Image:https://componentsearchengine.com/Images/9/AD5160BRJZ10-RL7.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/AD5160BRJZ10-RL7.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:SOT23 (8-Pin)
Samacsys Footprint Name:RJ-8 (SOT23)_1Samacsys Released Date:2016-01-08 08:29:31
Is Samacsys:N其他特性:IT CAN ALSO OPERATE FROM A 5V NOMINAL SUPPLY
标称带宽:0.6 kHz控制接口:3-WIRE SERIAL
转换器类型:DIGITAL POTENTIOMETERJESD-30 代码:R-PDSO-G8
JESD-609代码:e4长度:2.9 mm
湿度敏感等级:1功能数量:1
位置数:256端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSSOP8,.1封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
电阻定律:LINEAR最大电阻容差:30%
最大电阻器端电压:3 V最小电阻器端电压:
座面最大高度:1.45 mm子类别:Digital Potentiometers
标称供电电压:3 V表面贴装:YES
标称温度系数:45 ppm/ °C温度等级:AUTOMOTIVE
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40标称总电阻:10000 Ω
宽度:1.6 mmBase Number Matches:1

AD5160BRJZ10-RL7 数据手册

 浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第1页浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第2页浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第3页浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第5页浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第6页浏览型号AD5160BRJZ10-RL7的Datasheet PDF文件第7页 
AD5160  
10 kΩ, 50 kΩ, 100 kΩ VERSIONS  
VDD = 5 V ꢀ1%, or 3 V ꢀ1%ꢁ VA = VDDꢁ VB = 1 Vꢁ −41°C < TA < +ꢀ25°Cꢁ unless otherwise noted.  
Table 2.  
Parameter  
Symbol Conditions  
Min Typ1  
Max  
Unit  
DC CHARACTERISTICS  
Rheostat Mode  
Resistor Differential Nonlinearity2  
Resistor Integral Nonlinearity2  
Nominal Resistor Tolerance3  
Resistance Temperature Coefficient  
R-DNL  
R-INL  
∆RAB  
RWB, VA = no connect  
RWB, VA = no connect  
TA = 25°C  
−1  
−2  
−15  
±±.1  
±±.25  
+1  
+2  
+15  
LSB  
LSB  
%
∆RAB/∆T VAB = VDD  
,
45  
5±  
ppm/°C  
Wiper = no connect  
VDD = 5 V  
Specifications apply to all VRs  
Wiper Resistance  
Potentiometer Divider Mode  
Resolution  
RW  
12±  
Ω
N
8
Bits  
Differential Nonlinearity4  
Integral Nonlinearity4  
Voltage Divider Temperature  
Coefficient  
DNL  
INL  
∆VW/∆T  
−1  
−1  
±±.1  
±±.3  
15  
+1  
+1  
LSB  
LSB  
ppm/°C  
Code = ±x8±  
Full-Scale Error  
Zero-Scale Error  
VWFSE  
VWZSE  
Code = ±xFF  
Code = ±x±±  
−3  
±
−1  
1
±
3
LSB  
LSB  
RESISTOR TERMINALS  
Voltage Range5  
VA,B,W  
CA,B  
GND  
VDD  
V
pF  
Capacitance A, Capacitance B6  
f = 1 MHz, measured to GND, code =  
±x8±  
f = 1 MHz, measured to GND, code =  
±x8±  
45  
6±  
1
Capacitance W6  
CW  
ICM  
pF  
Common-Mode Leakage  
DIGITAL INPUTS  
VA = VB = VDD/2  
nA  
Input Logic High  
Input Logic Low  
Input Logic High  
Input Logic Low  
Input Current  
Input Capacitance6  
VIH  
VIL  
VIH  
VIL  
IIL  
2.4  
2.1  
V
V
V
V
μA  
pF  
±.8  
VDD = 3 V  
VDD = 3 V  
VIN = ± V or 5 V  
±.6  
±1  
CIL  
5
POWER SUPPLIES  
Power Supply Range  
Supply Current  
Power Dissipationꢀ  
Power Supply Sensitivity  
DYNAMIC CHARACTERISTICS6, 8  
Bandwidth –3 dB  
VDD RANGE  
IDD  
PDISS  
2.ꢀ  
5.5  
8
±.2  
V
μA  
mW  
VIH = 5 V or VIL = ± V  
VIH = 5 V or VIL = ± V, VDD = 5 V  
∆VDD = +5 V ± 1±%, code = midscale  
3
PSS  
±±.±2  
±±.±5 %/%  
BW  
THDW  
RAB = 1± kΩ/5± kΩ/1±± kΩ, Code = ±x8±  
VA = 1 V rms, VB = ± V, f = 1 kHz, RAB  
1± kΩ  
6±±/1±±/4±  
±.±5  
kHz  
%
Total Harmonic Distortion  
=
VW Settling Time (1± kΩ/5± kΩ/1±± kΩ)  
Resistor Noise Voltage Density  
tS  
VA = 5 V, VB = ± V,  
±1 LSB error band  
RWB = 5 kΩ  
2
9
μs  
eN_WB  
nV/√Hz  
1 Typical specifications represent average readings at +25°C and VDD = 5 V.  
2 Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper  
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic.  
3 VAB = VDD, wiper (VW) = no connect.  
4 INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output digital-to-analog converter (DAC). VA = VDD and VB =  
± V. DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions.  
5 Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other.  
6 Guaranteed by design and not subject to production test.  
PDISS is calculated from (IDD × VDD). CMOS logic level inputs result in minimum power dissipation.  
8 All dynamic characteristics use VDD = 5 V.  
Rev. B | Page 4 of 16  
 
 
 
 
 

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