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AD-UMC3N
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD.
AD-UMC3N Digital Transistor (Built-In Resistors)
AD-UMC3N
FEATURES
Dual digital transistor (NPN+PNP)
⚫
⚫
⚫
AD-DTA114E and AD-DTC114E series chips in one package
Ideal for power switch circuits
AEC-Q101 qualified
MARKING
C3
MAXIMUM RATINGS NPN AD-DTC114E (Tj = 25°C unless otherwise specified)
Parameter
Symbol
VCC
Value
50
Unit
V
Supply voltage
Input voltage
Output current
VIN
-10 ~ 40
50
V
1)
IO
mA
mA
mW
°C
Peak collector current
ICM
100
1)
Maximum power dissipation
PD
150
Operating junction and storage temperature range
Tj, Tstg
-55 ~ 150
ELECTRICAL CHARACTERISTICS NPN AD-DTC114E (Tj = 25°C unless otherwise specified)
Parameter
Input voltage
Symbol
VI(off)
VI(on)
VO(on)
II
Test condition
VCC = 5V, IO = 100µA
Min
Typ
Max
-
Unit
0.3
-
V
VO = 0.3V, IO = 10mA
IO/II = 10mA/0.5mA
VI = 5V
-
-
-
3
Output voltage
Input current
-
-
0.3
0.88
0.5
-
V
mA
µA
-
-
Output current
DC current gain
Input resistance
Resistance ratio
IO(off)
GI
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
-
30
7
-
kΩ
R1
10
1
13
1.2
-
R2 /R1
fT
0.8
-
Transition frequency
VO = 10V, IO = 5mA, f = 100MHz
250
MHz
Version 1.0
1 / 7
2021-07-01