Characteristics
ACST310-8FI
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Test conditions
Value
Unit
I
On-state RMS current (full sine wave)
T = 93 °C
3
A
T(RMS)
c
f = 50 Hz
f = 60 Hz
tp = 20 ms
tp = 16.7 ms
tp = 10 ms
20
21
2.6
Non repetitive surge peak on-state current
I
A
TSM
(T initial = 25 °C)
J
2
2
I t
I t value for fusing
A²s
Critical rate of rise of on-state current
dI/dt
f = 120 Hz
T = 125 °C
50
A/µs
J
I
= 2 x I
t = 100 ns
G
GT, r
(1)
V
Non repetitive line peak mains voltage
Average gate power dissipation
Peak gate power
T = 25 °C
2
0.1
kV
W
W
A
PP
J
P
T = 125°C
J
G(AV)
P
tp = 20 µs
tp = 20 µs
T = 125 °C
10
GM
J
I
Peak gate current
T = 125°C
1.6
GM
J
T
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
°C
°C
stg
T
j
Maximum lead temperature for soldering during 10 s (at 3 mm from plastic
case)
T
260
°C
L
1. according to test described by standard IEC 61000-4-5 standard (see Figure 16).
Table 3. Electrical characteristics
Symbol
Test conditions
Quadrant
T
Value
Unit
j
(1)
I
MAX.
MAX.
MIN.
10
1.1
0.2
20
mA
V
GT
VOUT = 12 V, RL = 33 Ω
I - II - III
I - II - III
25 °C
V
V
GT
VOUT = VDRM, RL = 3.3 kΩ
125 °C
25 °C
V
GD
(2)
I
IOUT = 100 mA
MAX.
mA
H
I - III
II
25
I
IG = 1.2 x I
25 °C
MAX.
mA
L
GT
35
(2)
dV/dt
VOUT = 67% V
, gate open
125 °C
125 °C
125 °C
25 °C
MIN.
MIN.
MIN.
MIN.
1000
5
V/µs
A/ms
A/ms
V
DRM
(2)
(2)
(dI/dt)c
(dI/dt)c
(dV/dt)c = 0.1V/µs
(dV/dt)c = 10 V/µs
1
V
ICL = 0.1 mA, tp = 1 ms
850
CL
1. Minimum IGT is guaranteed at 5% of IGT max.
2. For both polarities of OUT pin referenced to COM pin
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