Datasheet > ACE8202B

ACE8202B

更新时间： 2022-05-24 16:11:10

品牌	Logo	应用领域
ACE		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	651K
描述
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

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ACE8202B 数据手册

ACE8202B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description

The ACE8202B uses advanced trench technology to provide excellent R_DS(ON)and low gate charge.

They offer operation over a wide gate drive range from 2.5V to 12V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features

 V_DS(V)=20V

 I_D=7.5A (V_GS=4.5V)

 R_DS(ON)<21 mΩ (V_GS=4.5V)

 R_DS(ON)<35 mΩ (V_GS=2.5V)

 ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

Gate-Source Voltage

V_DSS

V_GSS

±12

7.5

T_A=25℃

T_A=70℃

Continuous Drain Current *AC

Pulsed Drain Current

Power Dissipation

I_D

I_DM

P_D

T_A=25℃

T_A=70℃

2.5

1.6

Operating Junction Temperature / Storage Temperature Range T_J/T_STG-55/150 C

Packaging Type

DFN3*3-8L

VER 1.2

12 3 4 5 6 7

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