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A8518KLPTR-T-1 PDF预览

A8518KLPTR-T-1

更新时间: 2022-02-26 11:34:59
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30页 1458K
描述
Fully integrated 42 V MOSFET for boost converter

A8518KLPTR-T-1 数据手册

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Wide Input Voltage Range, High-Efficiency,  
Fault-Tolerant LED Driver  
A8518 and A8518-1  
ELECTRICAL CHARACTERISTICS [1] (continued): Unless otherwise noted, specifications are valid at VIN = 16 V, TA = 25°C, • indi-  
cates specifications guaranteed over the full operating temperature range with TA = TJ = –40°C to 125°C, typical specifications are at TA = 25°C  
Characteristic  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
OSCILLATOR FREQUENCY  
fSW measurements were taken with dithering  
function disabled  
Oscillator Frequency  
fSW  
1.95  
2.15  
2.35  
MHz  
LED CURRENT SINKS  
LEDx Accuracy [4]  
ErrLED  
ΔLEDx  
VLED  
AISET  
VISET  
IISET  
RISET = 8.33 kΩ  
0.7  
0.8  
3
%
%
LEDx Matching  
ISET = 120 µA  
2
LEDx Regulation Voltage  
ISET to ILEDx Current Gain  
ISET Pin Voltage  
VLED1 = VLED2, ISET = 120 µA  
ISET = 120 µA  
750  
1391  
0.987  
20  
850  
1419  
1.017  
975  
1453  
1.047  
144  
mV  
A/A  
V
Allowable ISET Current  
µA  
While LED sinks are in regulation; sensed from  
VLEDx to AGND  
VLEDx Short Detect  
VLEDx(SC)  
tSS  
4.7  
5.2  
20  
5.7  
V
Maximum time duration before all LED channels  
come into regulation, or OVP is tripped  
LED Startup Ramp Time [2]  
ms  
Measured while PWM = low, during dimming  
control and internal references are powered on  
(exceeding tPWML results in shutdown)  
Maximum PWM Dimming Until Off-  
Time [2]  
tPWML  
16  
ms  
First cycle when powering up IC (PWM = 0 to  
3.3 V)  
0.75  
0.5  
2
1
µs  
µs  
Minimum PWM On-Time  
tPWMH(min1)  
Subsequent PWM pulses  
Time between PWM going high and when LED  
current reaches 90% of maximum  
(VPWM = 0 to 3.3 V)  
PWM High to LED On Delay  
PWM Low to LED Off Delay  
tdPWM(on)  
0.2  
0.5  
0.5  
µs  
µs  
Time between PWM going low and when LED  
current reaches 10% of maximum  
(VPWM = 3.3 to 0 V)  
tdPWM(off)  
0.36  
GATE PIN  
Gate Pin Sink Current  
Gate Pin Source Current  
IGSINK  
VGS = VIN, no input OCP fault  
–113  
6
μA  
IGSOURCE VGS = VIN – 6 V, input OCP fault tripped  
mA  
Gate Shutdown Delay When  
Overcurrent Fault Is Tripped [2]  
tFAULT  
VIN – VSENSE = 200 mV. Monitored at FAULT pin  
3
µs  
V
Measured between GATE and VIN when gate  
is on  
Gate Voltage  
VGS  
–6.7  
VSENSE PIN  
VSENSE Pin Sink Current  
VSENSE Trip Point  
Iadj  
17.2  
95  
21.5  
110  
25.8  
125  
µA  
VSENSE(trip) Measured between VIN and VSENSE, RADJ = 0  
mV  
Continued on the next page…  
1 For input and output current specifications, negative current is defined as coming out of the node or pin (sourcing); positive current is defined as going into the node or pin  
(sinking).  
2 Ensured by design and characterization, not production tested.  
3 Minimum VIN = 4.5 V is only required at startup. After startup is completed, IC can continue to operate down to VIN = 3.9 V.  
4 LED current is trimmed to cancel variations in both Gain and ISET voltage.  
Allegro MicroSystems, LLC  
115 Northeast Cutoff  
7
Worcester, Massachusetts 01615-0036 U.S.A.  
1.508.853.5000; www.allegromicro.com  

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