Datasheet > A62S6316G-55SIF

A62S6316G-55SIF

更新时间： 2022-12-01 23:21:57

品牌	Logo	应用领域
联笙电子 - AMICC		静态存储器
页数	文件大小	规格书
14页	187K
描述
Standard SRAM, 64KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MINI BGA-48

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数据手册

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A62S6316G-55SIF 数据手册

A62S6316 Series

AC Characteristics (TA = 0°C to +70°C or -25°C to 85°C, VCC = 2.7V to 3.3V)

A62S6316-55S/SI

A62S6316-70S/SI

Symbol

Parameter

Unit

Min.

Max.

Min.

Max.

Read Cycle

tRC

Read Cycle Time

tAA

Address Access Time

tACE

tBE

Chip Enable Access Time

Byte Enable Access Time

tOE

Output Enable to Output Valid

Chip Enable to Output in Low Z

Byte Enable to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Byte Disable to Output in High Z

Output Disable to Output in High Z

Output Hold from Address Change

tCLZ

tBLZ

tOLZ

tCHZ

tBHZ

tOHZ

tOH

Write Cycle

tWC

Write Cycle Time

tCW

Chip Enable to End of Write

Byte Enable to End of Write

Address Setup Time

tBW

tAS

tAW

Address Valid to End of Write

Write Pulse Width

tWP

tWR

Write Recovery Time

tWHZ

tDW

Write to Output in High Z

Data to Write Time Overlap

Data Hold from Write Time

Output Active from End of Write

tDH

tOW

Note: tCHZ, tBHZ and tOHZ and tWHZ are defined as the time at which the outputs achieve the open circuit condition and are

not referred to output voltage levels.

(August, 2004, Version 1.1)

AMIC Technology, Corp.

1...4 5 678 9 10...14

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