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A61L6316V-12 PDF预览

A61L6316V-12

更新时间: 2024-02-21 23:09:20
品牌 Logo 应用领域
联笙电子 - AMICC 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
15页 149K
描述
64K X 16 BIT HIGH SPEED CMOS SRAM

A61L6316V-12 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:TSOP2, TSOP44,.46,32Reach Compliance Code:unknown
风险等级:5.88最长访问时间:12 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:65536 words字数代码:64000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:64KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.005 A最小待机电流:2 V
子类别:SRAMs最大压摆率:0.22 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

A61L6316V-12 数据手册

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A61L6316 Series  
Absolute Maximum Ratings*  
*Comments  
VCC to GND . . . . . . . . . . . . . . . . . . . . . . -0.5V to +4.6V  
IN, IN/OUT Volt to GND . . . . . . . . -0.5V to VCC + 0.5V  
Operating Temperature, Topr . . . . . . . . . . . . . . . . . . . . .  
. . . . . . . . . . . . . . . . . . . 0°C to +70°C or -25°C to +85°C  
Storage Temperature, Tstg . . . . . . . . . -55°C to +125°C  
Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . 0.7W  
Soldering Temp. & Time . . . . . . . . . . . . . 260°C, 10 sec  
Stresses above those listed under "Absolute Maximum  
Ratings" may cause permanent damage to this device.  
These are stress ratings only. Functional operation of this  
device at these or any other conditions above those  
indicated in the operational sections of this specification  
is not implied or intended. Exposure to the absolute  
maximum rating conditions for extended periods may  
affect device reliability.  
DC Electrical Characteristics (TA = 0°C to + 70°C or -25°C to +85°C, -10: 3.3V+10%, -5%; -12, -15: 3.3V±10%)  
A61L6316-10 A61L6316-12  
A61L6316-15  
Symbol  
Parameter  
Unit  
Conditions  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Input Leakage  
-
2
-
2
-
2
VIN = GND to VCC  
½ILI½  
mA  
mA  
CE = VIH, OE = VIH  
VI/O = GND to VCC  
Output Leakage  
-
2
-
2
-
2
½ILO½  
CE = VIL, II/O = 0 mA  
Min. Cycle, Duty = 100%  
ICC1 (2)  
ISB  
Dynamic Operating  
Current  
-
-
230  
25  
-
-
220  
25  
-
-
210  
25  
mA  
mA  
CE = VIH  
Standby Power  
Supply Current  
CE ³ VCC - 0.2V,  
VIN ³ VCC -0.2V or  
VIN £ 0.2V  
12  
12  
12  
ISB1  
-
-
-
mA  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
-
0.4  
-
-
0.4  
-
-
0.4  
-
V
V
IOL = 8 mA  
2.4  
2.4  
2.4  
IOH = -4 mA  
Notes: 1. VIL = -3.0V for pulses less than 20 ns.  
2. ICC1 is dependent on output loading, cycle rates, and Read/Write patterns.  
(July, 2002, Version 1.1)  
4
AMIC Technology, Inc.  

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