Datasheet > A43E0632V-75I

A43E0632V-75I

更新时间： 2022-04-25 03:48:45

品牌	Logo	应用领域
联笙电子 - AMICC		动态存储器
页数	文件大小	规格书
42页	502K
描述
1M X 16 Bit X 4 Banks Synchronous DRAM

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数据手册

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A43E0632V-75I 数据手册

A43L2616B

1M X 16 Bit X 4 Banks Synchronous DRAM

Feature

JEDEC standard 3.3V power supply

LVTTL compatible with multiplexed address

Burst Read Single-bit Write operation

DQM for masking

Auto & self refresh

Four banks / Pulse RAS

64ms refresh period (4K cycle)

Commercial Temperature Operation : 0°C~70°C

Industrial Temperature Operation : -40°C~85°C for –U

MRS cycle with address key programs

- CAS Latency (2,3)

- Burst Length (1,2,4,8 & full page)

- Burst Type (Sequential & Interleave)

grade

All inputs are sampled at the positive going edge of the

system clock

Clock Frequency: 166MHz @ CL=3

143MHz @ CL=3

Available in 54-pin TSOP(II) package

Package is available to lead free (-F series)

All Pb-free (Lead-free) products are RoHS compliant

General Description

The A43L2616B is 67,108,864 bits synchronous high data

rate Dynamic RAM organized as 4 X 1,048,576 words by

16 bits, fabricated with AMIC’s high performance CMOS

technology. Synchronous design allows precise cycle

control with the use of system clock.

I/O transactions are possible on every clock cycle. Range

of operating frequencies, programmable latencies allows

the same device to be useful for a variety of high

bandwidth,

high

performance

memory

system

applications.

Pin Configuration

TSOP (II)

54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28

A43L2616BV

9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27

(December, 2009, Version 1.3)

AMIC Technology, Corp.

123 4 5 6 7...42

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