Datasheet > A400DB90VC

A400DB90VC

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
超微 - AMD		闪存
页数	文件大小	规格书
41页	775K
描述
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory

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数据手册

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A400DB90VC 数据手册

A D V A N C E I N F O R M A T I O N

AC CHARACTERISTICS

555 for program

2AA for erase

PA for program

SA for sector erase

555 for chip erase

Data# Polling

Addresses

t_WC

t_WH

t_AS

t_AH

WE#

OE#

t_GHEL

t_{WHWH1 or 2}

t_CP

CE#

Data

t_WS

t_CPH

t_DS

t_BUSY

t_DH

DQ7#

D_OUT

t_RH

A0 for program

55 for erase

PD for program

30 for sector erase

10 for chip erase

RESET#

RY/BY#

Notes:

1. PA = program address, PD = program data, DQ7# = complement of the data written, D

2. Figure indicates the last two bus cycles of command sequence.

3. Word mode address used as an example.

= data written

OUT

Figure 24. Alternate CE# Controlled Write Operation Timings

Am29SL400D

Rev. A Amend. +1 April 13, 2005

1...35 36 373839 40 41

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