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A3985SLDTR-T PDF预览

A3985SLDTR-T

更新时间: 2024-01-30 23:17:00
品牌 Logo 应用领域
急速微 - ALLEGRO 驱动器
页数 文件大小 规格书
15页 447K
描述
Digitally Programmable Dual Full-Bridge MOSFET Driver

A3985SLDTR-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:TSSOP,针数:38
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.56
高边驱动器:YES接口集成电路类型:FULL BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDSO-G38JESD-609代码:e3
长度:9.7 mm湿度敏感等级:2
功能数量:1端子数量:38
最高工作温度:85 °C最低工作温度:-20 °C
标称输出峰值电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压:5.5 V最小供电电压:3 V
标称供电电压:5 V电源电压1-最大:50 V
电源电压1-分钟:12 V表面贴装:YES
温度等级:OTHER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:4.4 mmBase Number Matches:1

A3985SLDTR-T 数据手册

 浏览型号A3985SLDTR-T的Datasheet PDF文件第2页浏览型号A3985SLDTR-T的Datasheet PDF文件第3页浏览型号A3985SLDTR-T的Datasheet PDF文件第4页浏览型号A3985SLDTR-T的Datasheet PDF文件第6页浏览型号A3985SLDTR-T的Datasheet PDF文件第7页浏览型号A3985SLDTR-T的Datasheet PDF文件第8页 
Digitally Programmable  
Dual Full-Bridge MOSFET Driver  
A3985  
ELECTRICAL CHARACTERISTICS, continued, at TA = 25°C, VDD = 5 V, VBB = 12 to 50 V, unless noted otherwise  
Characteristics  
Current Control  
Symbol  
Test Conditions  
Min.  
Typ.  
Max. Units  
fMCK = 4 MHz;  
Word1:Bits D1 and D2 = 00  
Blank Time  
tBLANK  
1
μs  
μs  
fMCK = 4 MHz,  
Word1:Bits D3 to D7 = 01010, and  
D15 = 0  
Fixed Off-Time  
tOFF  
21.75  
22  
Reference Input Voltage  
Internal Reference Voltage  
Current Trip Point Error2  
Reference Input Current1  
Internal Oscillator Frequency  
Maximum Clock Input Frequency  
Master Clock Frequency  
Protection  
VREF  
0.8  
1.9  
2.0  
2
2.1  
±5  
3
V
V
VREFInt 20 kΩ to VDD  
EITrip  
IREF  
fOSC  
VREF = 2 V  
%
–3  
3.2  
0
μA  
ROSC = 10 kΩ  
4
4.8  
MHz  
MHz  
MHz  
fEXTmax External clock selected  
fMCK  
10  
4
0.5  
5
VREG Undervoltage Lockout  
VREGUV Decreasing VREG  
VREGUVHys  
7.5  
100  
2.45  
50  
8
8.5  
V
mV  
V
VREG Undervoltage Lockout  
Hysteresis  
200  
2.7  
100  
165  
15  
VDD Undervoltage Lockout  
VDDUV  
VDDUVHys  
TTSD  
Decreasing VDD  
2.95  
VDD Undervoltage Lockout  
Hysteresis  
mV  
ºC  
ºC  
Overtemperature Shut Down  
Temperature increasing  
Overtemperature Shut Down  
Hysteresis  
TTSDHys Recovery = TTSD – TTSDHys  
Continued on the next page...  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Test Conditions*  
4-layer PCB, based on JEDEC standard  
1-layer PCB with copper limited to solder pads  
Value Units  
47  
ºC/W  
ºC/W  
Package Thermal Resistance  
RθJA  
114  
*Additional thermal information available on Allegro Web site.  
Allegro MicroSystems, Inc.  
115 Northeast Cutoff, Box 15036  
5
Worcester, Massachusetts 01615-0036 (508) 853-5000  
www.allegromicro.com  

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