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A29L040AV-70F PDF预览

A29L040AV-70F

更新时间: 2024-01-14 05:13:17
品牌 Logo 应用领域
联笙电子 - AMICC 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
30页 405K
描述
512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory

A29L040AV-70F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP1
包装说明:TSOP1, TSSOP32,.8,20针数:32
Reach Compliance Code:unknown风险等级:5.76
最长访问时间:70 ns命令用户界面:YES
数据轮询:YES耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:4194304 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:8端子数量:32
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.03 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

A29L040AV-70F 数据手册

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A29L040A Series  
512K X 8 Bit CMOS 3.0 Volt-only,  
Uniform Sector Flash Memory  
Preliminary  
Features  
Single power supply operation  
- Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
- Regulated voltage range: 3.0 to 3.6 volt read and write  
operations for compatibility with high performance 3.3  
volt microprocessors  
- Embedded Erase algorithm will automatically erase the  
entire chip or any combination of designated sectors  
and verify the erased sectors  
- Embedded Program algorithm automatically writes and  
verifies bytes at specified addresses  
Typical 100,000 program/erase cycles per sector  
Access times:  
- 70 (max.)  
Current:  
20-year data retention at 125°C  
- Reliable operation for the life of the system  
Compatible with JEDEC-standards  
- 4 mA typical active read current  
- 20 mA typical program/erase current  
- 200 nA typical CMOS standby  
- 200 nA Automatic Sleep Mode current  
Flexible sector architecture  
- Pinout and software compatible with single-power-  
supply Flash memory standard  
- Superior inadvertent write protection  
Polling and toggle bits  
Data  
- Provides a software method of detecting completion of  
program or erase operations  
- 8 uniform sectors of 64 Kbyte each  
- Any combination of sectors can be erased  
- Supports full chip erase  
Erase Suspend/Erase Resume  
- Suspends a sector erase operation to read data from,  
or program data to, a non-erasing sector, then  
resumes the erase operation  
- Sector protection:  
A hardware method of protecting sectors to prevent  
any inadvertent program or erase operations within that  
sector  
Package options  
- 32-pin DIP, PLCC, TSOP (8mm x 20mm), sTSOP  
(8mm x 13.4mm), sTSOP (8mm x 14mm).  
Embedded Erase Algorithms  
General Description  
Commands are written to the command register using  
standard microprocessor write timings. Register contents  
serve as input to an internal state-machine that controls the  
erase and programming circuitry. Write cycles also internally  
latch addresses and data needed for the programming and  
erase operations. Reading data out of the device is similar to  
reading from other Flash or EPROM devices.  
Device programming occurs by writing the proper program  
command sequence. This initiates the Embedded Program  
algorithm - an internal algorithm that automatically times the  
program pulse widths and verifies proper program margin.  
Device erasure occurs by executing the proper erase  
command sequence. This initiates the Embedded Erase  
The A29L040A is a 3.0 volt-only Flash memory organized as  
524,288 bytes of 8 bits each. The 512 Kbytes of data are  
further divided into eight sectors of 64 Kbytes each for  
flexible sector erase capability. The 8 bits of data appear on  
I/O0 - I/O7 while the addresses are input on A0 to A18. The  
A29L040A is offered in 32-pin PLCC, TSOP (8mm x 20mm)  
or sTSOP (8mm x 13.4mm) packages. This device is  
designed to be programmed in-system with the standard  
system 3.0 volt VCC supply. Additional 12.0 volt VPP is not  
required for in-system write or erase operations. However,  
the A29L040A can also be programmed in standard EPROM  
programmers.  
The A29L040A has a second toggle bit, I/O2, to indicate  
whether the addressed sector is being selected for erase,  
and also offers the ability to program in the Erase Suspend  
mode. The standard A29L040A offers access times of 70ns,  
allowing high-speed microprocessors to operate without wait  
states. To eliminate bus contention the device has separate  
algorithm  
-
an internal algorithm that automatically  
preprograms the array (if it is not already programmed)  
before executing the erase operation. During erase, the  
device automatically times the erase pulse widths and  
verifies proper erase margin.  
The host system can detect whether a program or erase  
chip enable (  
), write enable (  
) and output enable  
WE  
CE  
operation is complete by reading the I/O7 (  
Polling) and  
Data  
(
) controls.  
OE  
I/O6 (toggle) status bits. After a program or erase cycle has  
been completed, the device is ready to read array data or  
accept another command.  
The sector erase architecture allows memory sectors to be  
erased and reprogrammed without affecting the data  
The device requires only a single 3.0 volt power supply for  
both read and write functions. Internally generated and  
regulated voltages are provided for the program and erase  
operations.  
The A29L040A is entirely software command set compatible  
with the JEDEC single-power-supply Flash standard.  
PRELIMINARY (March, 2005, Version 0.0)  
1
AMIC Technology, Corp.  

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