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A29010V-90 PDF预览

A29010V-90

更新时间: 2024-02-02 09:50:17
品牌 Logo 应用领域
联笙电子 - AMICC 内存集成电路光电二极管
页数 文件大小 规格书
30页 289K
描述
128K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory

A29010V-90 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.56最长访问时间:90 ns
命令用户界面:YES数据轮询:YES
JESD-30 代码:R-PDSO-G32长度:18.4 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
部门数/规模:4端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装等效代码:TSSOP32,.8,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
电源:5 V编程电压:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
部门规模:32K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL切换位:YES
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

A29010V-90 数据手册

 浏览型号A29010V-90的Datasheet PDF文件第4页浏览型号A29010V-90的Datasheet PDF文件第5页浏览型号A29010V-90的Datasheet PDF文件第6页浏览型号A29010V-90的Datasheet PDF文件第8页浏览型号A29010V-90的Datasheet PDF文件第9页浏览型号A29010V-90的Datasheet PDF文件第10页 
A29010 Series  
Sector Protection/Unprotection  
Reading Array Data  
The hardware sector protection feature disables both  
program and erase operations in any sector. The hardware  
sector unprotection feature re-enables both program and  
erase operations in previously protected sectors.  
Sector protection/unprotection must be implemented using  
programming equipment. The procedure requires a high  
voltage (VID) on address pin A9 and the control pins.  
The device is shipped with all sectors unprotected.  
The device is automatically set to reading array data after  
device power-up. No commands are required to retrieve  
data. The device is also ready to read array data after  
completing an Embedded Program or Embedded Erase  
algorithm. After the device accepts an Erase Suspend  
command, the device enters the Erase Suspend mode. The  
system can read array data using the standard read timings,  
except that if it reads at an address within erase-suspended  
sectors, the device outputs status data. After completing a  
programming operation in the Erase Suspend mode, the  
system may once again read array data with the same  
exception. See "Erase Suspend/Erase Resume Commands"  
for more information on this mode.  
The system must issue the reset command to re-enable the  
device for reading array data if I/O5 goes high, or while in the  
autoselect mode. See the "Reset Command" section, next.  
See also "Requirements for Reading Array Data" in the  
"Device Bus Operations" section for more information. The  
Read Operations table provides the read parameters, and  
Read Operation Timings diagram shows the timing diagram.  
It is possible to determine whether a sector is protected or  
unprotected. See "Autoselect Mode" for details.  
Hardware Data Protection  
The requirement of command unlocking sequence for  
programming or erasing provides data protection against  
inadvertent writes (refer to the Command Definitions table).  
In addition, the following hardware data protection measures  
prevent accidental erasure or programming, which might  
otherwise be caused by spurious system level signals during  
VCC power-up transitions, or from system noise. The device is  
powered up to read array data to avoid accidentally writing  
data to the array.  
Reset Command  
Write Pulse "Glitch" Protection  
Writing the reset command to the device resets the device to  
reading array data. Address bits are don't care for this  
command. The reset command may be written between the  
sequence cycles in an erase command sequence before  
erasing begins. This resets the device to reading array data.  
Once erasure begins, however, the device ignores reset  
commands until the operation is complete.  
Noise pulses of less than 5ns (typical) on  
do not initiate a write cycle.  
,
or  
OE CE  
WE  
Logical Inhibit  
Write cycles are inhibited by holding any one of  
=VIL,  
OE  
CE  
The reset command may be written between the sequence  
= VIH or  
= VIH. To initiate a write cycle,  
and  
CE  
WE  
cycles in  
a
program command sequence before  
must be a logical zero while  
is a logical one.  
OE  
WE  
programming begins. This resets the device to reading array  
data (also applies to programming in Erase Suspend mode).  
Once programming begins, however, the device ignores  
reset commands until the operation is complete.  
The reset command may be written between the sequence  
cycles in an autoselect command sequence. Once in the  
autoselect mode, the reset command must be written to  
return to reading array data (also applies to autoselect during  
Erase Suspend).  
Power-Up Write Inhibit  
If  
=
= VIL and  
= VIH during power up, the  
OE  
WE  
device does not accept commands on the rising edge of  
. The internal state machine is automatically reset to  
CE  
WE  
reading array data on the initial power-up.  
Command Definitions  
If I/O5 goes high during a program or erase operation, writing  
the reset command returns the device to reading array data  
(also applies during Erase Suspend).  
Writing specific address and data commands or sequences  
into the command register initiates device operations. The  
Command Definitions table defines the valid register  
command sequences. Writing incorrect address and data  
values or writing them in the improper sequence resets the  
device to reading array data.  
All addresses are latched on the falling edge of  
or  
,
CE  
WE  
whichever happens later. All data is latched on the rising  
edge of or , whichever happens first. Refer to the  
WE  
CE  
appropriate timing diagrams in the "AC Characteristics"  
section.  
PRELIMINARY  
(August, 2001, Version 0.3)  
7
AMIC Technology, Inc.  

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