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A290021TV-90 PDF预览

A290021TV-90

更新时间: 2024-01-01 18:16:48
品牌 Logo 应用领域
联笙电子 - AMICC 闪存
页数 文件大小 规格书
32页 314K
描述
256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory

A290021TV-90 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.26最长访问时间:90 ns
其他特性:TOP BOOT SECTOR启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
长度:18.4 mm内存密度:2097152 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:1,2,1,3
端子数量:32字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,8K,32K,64K
最大待机电流:0.000005 A子类别:Flash Memories
最大压摆率:0.04 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:YES类型:NOR TYPE
宽度:8 mmBase Number Matches:1

A290021TV-90 数据手册

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A29002/A290021 Series  
Standby Mode  
Requirements for Reading Array Data  
When the system is not reading or writing to the device, it  
can place the device in the standby mode. In this mode,  
current consumption is greatly reduced, and the outputs are  
To read array data from the outputs, the system must drive  
the  
and  
pins to VIL.  
is the power control and  
CE  
OE  
CE  
selects the device.  
is the output control and gates  
OE  
array data to the output pins.  
placed in the high impedance state, independent of the  
input.  
OE  
should remain at VIH all  
WE  
the time during read operation. The internal state machine  
is set for reading array data upon device power-up, or after  
a hardware reset. This ensures that no spurious alteration  
of the memory content occurs during the power transition.  
No command is necessary in this mode to obtain array  
data. Standard microprocessor read cycles that assert valid  
addresses on the device address inputs produce valid data  
on the device data outputs. The device remains enabled for  
read access until the command register contents are  
altered.  
See "Reading Array Data" for more information. Refer to the  
AC Read Operations table for timing specifications and to  
the Read Operations Timings diagram for the timing  
waveforms, lCC1 in the DC Characteristics table represents  
the active current specification for reading array data.  
The device enters the CMOS standby mode when the  
CE  
&
pins (  
only on A290021) are both held at VCC  
CE  
RESET  
± 0.5V. (Note that this is a more restricted voltage range  
than VIH.) The device enters the TTL standby mode when  
is held at VIH, while  
(Not available on  
RESET  
CE  
A290021) is held at VCC±0.5V. The device requires the  
standard access time (tCE) before it is ready to read data.  
If the device is deselected during erasure or programming,  
the device draws active current until the operation is  
completed.  
ICC3 in the DC Characteristics tables represents the standby  
current specification.  
Output Disable Mode  
Writing Commands/Command Sequences  
When the  
input is at VIH, output from the device is  
OE  
disabled. The output pins are placed in the high impedance  
state.  
To write a command or command sequence (which  
includes programming data to the device and erasing  
sectors of memory), the system must drive  
and  
to  
CE  
WE  
: Hardware Reset Pin (N/A on A290021)  
RESET  
VIL, and  
to VIH. An erase operation can erase one  
OE  
The  
pin provides a hardware method of resetting  
RESET  
the device to reading array data. When the system drives  
the pin low for at least a period of tRP, the device  
sector, multiple sectors, or the entire device. The Sector  
Address Tables indicate the address range that each sector  
occupies. A "sector address" consists of the address inputs  
required to uniquely select a sector. See the "Command  
Definitions" section for details on erasing a sector or the  
entire chip, or suspending/resuming the erase operation.  
After the system writes the autoselect command sequence,  
the device enters the autoselect mode. The system can  
then read autoselect codes from the internal register (which  
is separate from the memory array) on I/O7 - I/O0. Standard  
read cycle timings apply in this mode. Refer to the  
"Autoselect Mode" and "Autoselect Command Sequence"  
sections for more information.  
RESET  
immediately terminates any operation in progress, tristates  
all data output pins, and ignores all read/write attempts for  
the duration of the  
pulse. The device also resets  
RESET  
the internal state machine to reading array data. The  
operation that was interrupted should be reinitiated once  
the device is ready to accept another command sequence,  
to ensure data integrity.  
The  
pin may be tied to the system reset circuitry. A  
RESET  
system reset would thus also reset the Flash memory,  
enabling the system to read the boot-up firmware from the  
Flash memory.  
Refer to the AC Characteristics tables for  
parameters and diagram.  
ICC2 in the Characteristics table represents the active  
current specification for the write mode. The "AC  
Characteristics" section contains timing specification tables  
and timing diagrams for write operations.  
RESET  
Program and Erase Operation Status  
During an erase or program operation, the system may  
check the status of the operation by reading the status bits  
on I/O7 - I/O0. Standard read cycle timings and ICC read  
specifications apply. Refer to "Write Operation Status" for  
more information, and to each AC Characteristics section  
for timing diagrams.  
(February, 2002, Version 1.0)  
5
AMIC Technology, Inc.  

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