5秒后页面跳转
A25L05PUO-UFS PDF预览

A25L05PUO-UFS

更新时间: 2024-02-25 23:24:48
品牌 Logo 应用领域
联笙电子 - AMICC 闪存
页数 文件大小 规格书
43页 544K
描述
2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

A25L05PUO-UFS 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:HVSON, SOLCC8,.25Reach Compliance Code:unknown
风险等级:5.7最大时钟频率 (fCLK):85 MHz
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
长度:6 mm内存密度:524288 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1端子数量:8
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX8
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:0.8 mm
串行总线类型:SPI最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.02 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE宽度:5 mm
写保护:HARDWARE/SOFTWARE

A25L05PUO-UFS 数据手册

 浏览型号A25L05PUO-UFS的Datasheet PDF文件第3页浏览型号A25L05PUO-UFS的Datasheet PDF文件第4页浏览型号A25L05PUO-UFS的Datasheet PDF文件第5页浏览型号A25L05PUO-UFS的Datasheet PDF文件第7页浏览型号A25L05PUO-UFS的Datasheet PDF文件第8页浏览型号A25L05PUO-UFS的Datasheet PDF文件第9页 
A25L20P/A25L10P/A25L05P Series  
OPERATING FEATURES  
Page Programming  
Status Register  
To program one data byte, two instructions are required: Write  
Enable (WREN), which is one byte, and a Page Program (PP)  
sequence, which consists of four bytes plus data. This is  
followed by the internal Program cycle (of duration tPP).  
To spread this overhead, the Page Program (PP) instruction  
allows up to 256 bytes to be programmed at a time (changing  
bits from 1 to 0), provided that they lie in consecutive  
addresses on the same page of memory.  
The Status Register contains a number of status and control  
bits that can be read or set (as appropriate) by specific  
instructions.  
WIP bit. The Write In Progress (WIP) bit indicates whether  
the memory is busy with a Write Status Register, Program or  
Erase cycle.  
WEL bit. The Write Enable Latch (WEL) bit indicates the  
status of the internal Write Enable Latch, BP1, and BP0 bits.  
The Block Protect (BP1, BP0) bits are non-volatile. They  
define the size of the area to be software protected against  
Program and Erase instructions.  
Sector Erase and Bulk Erase  
The Page Program (PP) instruction allows bits to be reset  
from 1 to 0. Before this can be applied, the bytes of memory  
need to have been erased to all 1s (FFh). This can be  
achieved, a sector at a time, using the Sector Erase (SE)  
instruction, or throughout the entire memory, using the Bulk  
Erase (BE) instruction. This starts an internal Erase cycle (of  
duration tSE or tBE).  
SRWD bit. The Status Register Write Disable (SRWD) bit is  
operated in conjunction with the Write Protect ( ) signal.  
W
The Status Register Write Disable (SRWD) bit and Write  
Protect ( ) signal allow the device to be put in the Hardware  
W
Protected mode. In this mode, the non-volatile bits of the  
Status Register (SRWD, BP1, BP0) become read-only bits.  
The Erase instruction must be preceded by a Write Enable  
(WREN) instruction.  
Protection Modes  
The environments where non-volatile memory devices are  
used can be very noisy. No SPI device can operate correctly  
in the presence of excessive noise. To help combat this, the  
A25L20P/A25L10P/A25L05P boasts the following data  
protection mechanisms:  
„ Power-On Reset and an internal timer (tPUW) can provide  
protection against inadvertant changes while the power  
supply is outside the operating specification.  
„ Program, Erase and Write Status Register instructions are  
checked that they consist of a number of clock pulses that  
is a multiple of eight, before they are accepted for  
execution.  
Polling During a Write, Program or Erase Cycle  
A further improvement in the time to Write Status Register  
(WRSR), Program (PP) or Erase (SE or BE) can be achieved  
by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The  
Write In Progress (WIP) bit is provided in the Status Register  
so that the application program can monitor its value, polling it  
to establish when the previous Write cycle, Program cycle or  
Erase cycle is complete.  
Active Power, Stand-by Power and Deep  
Power-Down Modes  
„ All instructions that modify data must be preceded by a  
Write Enable (WREN) instruction to set the Write Enable  
Latch (WEL) bit. This bit is returned to its reset state by  
the following events:  
When Chip Select ( ) is Low, the device is enabled, and in  
S
the Active Power mode.  
When Chip Select ( ) is High, the device is disabled, but  
S
could remain in the Active Power mode until all internal cycles  
have completed (Program, Erase, Write Status Register). The  
device then goes in to the Stand-by Power mode. The device  
consumption drops to ICC1.  
- Power-up  
- Write Disable (WRDI) instruction completion  
- Write Status Register (WRSR) instruction completion  
- Page Program (PP) instruction completion  
The Deep Power-down mode is entered when the specific  
instruction (the Enter Deep Power-down Mode (DP)  
instruction) is executed. The device consumption drops  
further to ICC2. The device remains in this mode until another  
specific instruction (the Release from Deep Power-down  
Mode and Read Electronic Signature (RES) instruction) is  
executed.  
All other instructions are ignored while the device is in the  
Deep Power-down mode. This can be used as an extra  
software protection mechanism, when the device is not in  
active use, to protect the device from inadvertent Write,  
Program or Erase instructions.  
- Sector Erase (SE) instruction completion  
- Bulk Erase (BE) instruction completion  
„ The Block Protect (BP1, BP0) bits allow part of the  
memory to be configured as read-only. This is the  
Software Protected Mode (SPM).  
„ The Write Protect ( ) signal allows the Block Protect  
W
(BP1, BP0) bits and Status Register Write Disable (SRWD)  
bit to be protected. This is the Hardware Protected Mode  
(HPM).  
„ In addition to the low power consumption feature, the  
Deep Power-down mode offers extra software protection  
from inadvertant Write, Program and Erase instructions,  
as all instructions are ignored except one particular  
instruction (the Release from Deep Power-down  
instruction).  
(August, 2007, Version 1.0)  
5
AMIC Technology Corp.  

与A25L05PUO-UFS相关器件

型号 品牌 描述 获取价格 数据表
A25L05PUQ-F AMICC 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

获取价格

A25L05PUQ-UF AMICC 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

获取价格

A25L05PU-UF AMICC 2Mbit / 1Mbit / 512Kbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface

获取价格

A25L080 AMICC 16Mbit Low Voltage, Serial Flash Memory With 100MHz Uniform 4KB Sectors

获取价格

A25L080 SERIES AMICC 8Mbit, Low Voltage, Serial Flash Memory with 100MHz Uniform 4KB Sectors 􀂄 Packag

获取价格

A25L080 SERIES AMICC AMIC SPI FLASH 08MBit DIP8

获取价格