Datasheet > A12FLR40MS05

A12FLR40MS05

更新时间： 2022-12-01 19:00:41

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	2598K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 12A, 400V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN

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A12FLR40MS05 数据手册

1N3879(R), 1N3889(R), 6/ 12/ 16FL(R) Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

V_RRMmax. repetitive

V_RSM, maximum non- I_RRMmax. I_RRMmax. I_RRMmax.

Type number

Code peak and off-state voltage repetitive peak voltage T_J= 25°C T_J= 100°C T_J= 150°C

µA

1N3879.

1N3880.

1N3881.

1N3882.

1N3883.

1N3889.

1N3890.

1N3891.

1N3892.

1N3893.

100

200

300

400

100

200

300

400

150

250

350

450

150

250

350

450

15 *

1.0 *

3.0 *

25 *

3.0 *

5.0 *

100

200

400

600

800

1000

150

275

500

725

950

1250

100

6FL..

12FL..

16FL..

6.0

Forward Conduction

1N3879.

1N3889.

Parameter

1N3883. 6FL.. 1N3893. 16FL.. Units Conditions

12FL..

I_F(AV)Max. average forward current

@ TC = 100°C

180° conduction, half sine wave.

12 *

I_F(RMS)Max. RMS current

9.5

130

135

110

115

170

180

145

150 *

145

I_FSM

Max. peak, one-cycle

215

225

180

190

230

210

160

150

t = 10ms No voltage

t = 8.3ms reapplied

t = 10ms 100% V_RRM

non-repetitive forward current

2222222222222

75 *

t = 8.3ms reapplied

Sinusoidal half wave

I²t

Maximum I²t for fusing

t = 10ms No voltage Initial T_J= 150°C

t = 8.3ms reapplied

130

A²s

103

t = 10ms 100% V_RRM

t = 8.3ms reapplied

I²√t

Maximum I²√t for fusing

363

1.4 *

1.5 *

856

1.4

1.5

1452

1.4 *

1.5 *

2290 A²√s t = 0.1 to 10ms, no voltage reapplied

V_FM

Max. forward voltage

1.4

1.5

T_J= 25°C, I_F= rated I_F(AV)(D.C.)

T_C= 100°C, I_FM= π x rated I_F(AV)

*JEDECregisteredvalue

123 4 5 6 7...10

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