Datasheet > A04T-5

A04T-5

更新时间： 2024-09-30 03:16:03

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
15页	569K
描述
RF Power Field Effect Transistor

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A04T-5 数据手册

Document Number: MRFE6S9045N

Rev. 0, 10/2007

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

MRFE6S9045NR1

Designed for broadband commercial and industrial applications with fre-

quencies up to 1000 MHz. The high gain and broadband performance of this

device makes it ideal for large-signal, common-source amplifier applications

in 28 volt base station equipment.

• Typical Single-Carrier N-CDMA Performance @ 880 MHz, V_DD= 28 Volts,

880 MHz, 10 W AVG., 28 V

SINGLE N-CDMA

LATERAL N-CHANNEL

BROADBAND

_DQ= 350 mA, P_out= 10 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.1 dB

Drain Efficiency — 32%

RF POWER MOSFET

ACPR @ 750 kHz Offset — -46 dBc in 30 kHz Channel Bandwidth

• Capable of Handling 5:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive,

Designed for Enhanced Ruggedness

GSM EDGE Application

• Typical GSM EDGE Performance: V_DD= 28 Volts, I_DQ= 350 mA,

_out= 16 Watts Avg., Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

CASE 1265-09, STYLE 1

TO-270-2

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = -62 dBc

Spectral Regrowth @ 600 kHz Offset = -78 dBc

EVM — 1.5% rms

PLASTIC

GSM Application

• Typical GSM Performance: V_DD= 28 Volts, I_DQ= 350 mA, P_out= 45 Watts,

Full Frequency Band (920-960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Integrated ESD Protection

• 225°C Capable Plastic Package

• RoHS Compliant

• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

- 0.5, +66

- 0.5, +12

32, +0

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

DSS

Maximum Operation Voltage

Storage Temperature Range

Case Operating Temperature

stg

- 65 to +150

150

°C

(1,2)

Operating Junction Temperature

225

°C

Table 2. Thermal Characteristics

Characteristic

(2,3)

Symbol

Value

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 45 W CW

Case Temperature 79°C, 10 W CW

°C/W

1.0

1.1

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access MTTF calculators

by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRFE6S9045NR1

RF Device Data

Freescale Semiconductor

12 3 4 5 6 7...15

中文翻译

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