Datasheet > 2SC2922_07

2SC2922_07

更新时间： 2022-09-17 10:11:01

品牌	Logo	应用领域
三垦 - SANKEN		晶体晶体管
页数	文件大小	规格书
1页	29K
描述
Silicon NPN Epitaxial Planar Transistor

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数据手册

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2SC2922_07 数据手册

LAP T 2 S C2 9 2 2

Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1216)

Application : Audio and General Purpose

External Dimensions MT-200

■Absolute maximum ratings (Ta=25°C)

■Electrical Characteristics

(Ta=25°C)

Ratings

Symbol

I^CBO

Ratings

100max

180min

30min

Symbol

V^CBO

VCEO

VEBO

Conditions

Unit

µA

Unit

±0.2

6.0

±0.3

36.4

180

V^CB=180V

±0.2

24.4

2.1

180

IEBO

±0.1

V^EB=5V

2-ø3.2

V(BR)CEO

hFE

I^C=25mA

V^CE=4V, IC=8V

I^C=8A, IB=0.8A

V^CE=12V, IE=–2A

V^CB=10V, f=1MHz

VCE(sat)

2.0max

50typ

MHz

200(Tc=25°C)

150

°C

COB

250typ

+0.2

-0.1

0.65

+0.2

Tstg

–55 to +150

hFE Rank O(30 to 60), Y(50 to 100), P(70 to 140), G(90 to 180)

1.05

-0.1

+0.3

-0.1

3.0

±0.1

5.45

■Typical Switching Characteristics (Common Emitter)

Weight : Approx 18.4g

a. Part No.

V^CC

(V)

R^L

(Ω)

I^C

(A)

V^B2

(V)

IB1

(A)

IB2

(A)

ton

(µs)

tstg

(µs)

b. Lot No.

–5

–1

0.2typ

1.3typ

0.45typ

–

IC VCE Characteristics (Typical)

VCE(sat) IB Characteristics (Typical)

IC VBE Temperature Characteristics (Typical)

(VCE=4V)

IC=10A

50mA

I^B=20mA

0.2

0.4

0.6

0.8

1.0

2.4

Collector-Emitter Voltage V^CE(V)

Base Current I^B(A)

Base-Emittor Voltage V^BE(V)

–

j-a t Characteristics

hFE IC Characteristics (Typical)

hFE IC Temperature Characteristics (Typical)

(VCE=4V)

200

125˚C

100

25˚C

Typ

–30˚C

0.5

0.02

0.1

100

Time t(ms)

1000 2000

0.1

0.5

10 17

0.1

0.5

10 17

Collector Current I^C(A)

–

fT IE Characteristics (Typical)

Safe Operating Area (Single Pulse)

–

Pc Ta Derating

(VCE=12V)

200

160

120

Typ

Without Heatsink

Natural Cooling

0.5

Without Heatsink

0.2

100

300

–0.02

–0.1

–1

–5 –10

100

125

150

Collector-Emitter Voltage V^CE(V)

Ambient Temperature Ta(˚C)

Emitter Current IE(A)

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