5秒后页面跳转
K7R640882M-FC200 PDF预览

K7R640882M-FC200

更新时间: 2024-01-17 02:29:56
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
20页 210K
描述
QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

K7R640882M-FC200 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:LBGA,针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:0.45 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B165长度:17 mm
内存密度:67108864 bit内存集成电路类型:QDR SRAM
内存宽度:8功能数量:1
端子数量:165字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX8封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.4 mm
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM宽度:15 mm
Base Number Matches:1

K7R640882M-FC200 数据手册

 浏览型号K7R640882M-FC200的Datasheet PDF文件第2页浏览型号K7R640882M-FC200的Datasheet PDF文件第3页浏览型号K7R640882M-FC200的Datasheet PDF文件第4页浏览型号K7R640882M-FC200的Datasheet PDF文件第5页浏览型号K7R640882M-FC200的Datasheet PDF文件第6页浏览型号K7R640882M-FC200的Datasheet PDF文件第7页 
K7R643682M  
K7R641882M  
K7R640982M  
K7R640882M  
Preliminary  
2Mx36 & 4Mx18 & 8Mx9 & 8Mx8 QDRTM II b2 SRAM  
Document Title  
2Mx36-bit, 4Mx18-bit, 8Mx9-bit, 8Mx8-bit QDRTM II b2 SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Advance  
Preliminary  
Sep, 14 200 2  
Oct. 24, 2002  
0.0  
1. Initial document.  
0.1  
1. Update AC timing characteristics.  
2. Change the JTAG instruction coding.  
Preliminary  
Preliminary  
Feb. 18, 2003  
Mar. 20, 2003  
0.2  
0.3  
1. Change the AC timing characteristics. (-25/-20 parts)  
2. Correct the overshoot and undershoot timing diagrams.  
3. Change the JTAG Block diagrams.  
4. Update the Boundary scan exit order.  
1. Correct the JTAG ID register definition  
2. Correct the AC timing parameter (delete the tKHKH Max value)  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Mar. 2003  
Rev 0.3  
- 1 -  

与K7R640882M-FC200相关器件

型号 品牌 描述 获取价格 数据表
K7R640882M-FC250 SAMSUNG QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

获取价格

K7R640884M-FC200 SAMSUNG QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

获取价格

K7R640884M-FC300 SAMSUNG QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

获取价格

K7R640982M SAMSUNG 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM

获取价格

K7R640982M-EC160 SAMSUNG QDR SRAM, 8MX9, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165

获取价格

K7R640982M-EC20T SAMSUNG Standard SRAM, 8MX9, 0.45ns, CMOS, PBGA165

获取价格