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2SA914 PDF预览

2SA914

更新时间: 2024-02-12 11:38:04
品牌 Logo 应用领域
松下 - PANASONIC 驱动器
页数 文件大小 规格书
3页 69K
描述
For audio system/pli drive

2SA914 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):0.05 A配置:Single
最小直流电流增益 (hFE):260最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):1.2 W
子类别:Other Transistors表面贴装:NO
标称过渡频率 (fT):70 MHz

2SA914 数据手册

 浏览型号2SA914的Datasheet PDF文件第2页浏览型号2SA914的Datasheet PDF文件第3页 
Power Transistors  
2SA0914 (2SA914)  
Silicon PNP epitaxial planar type  
Unit: mm  
+0.5  
–0.1  
8.0  
3.2 0.2  
For audio system/pli drive  
φ 3.16 0.1  
Complementary to 2SC1953  
Features  
A complementary pair with 2SC1953, is optimum for the pre-  
driver stage of a 60 W to 100 W output amplifier  
TO-126B package which requires no insulation plate for instal-  
lation to the heat sink  
Absolute Maximum Ratings TC = 25°C  
0.75 0.1  
4.6 0.2  
0.5 0.1  
2.3 0.2  
Parameter  
Symbol  
Rating  
150  
Unit  
V
0.5 0.1  
1.76 0.1  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
1: Emitter  
2: Collector  
3: Base  
150  
V
1
2
3
5  
V
TO-126B-A1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
50  
mA  
mA  
W
Peak collector current  
100  
1.2  
Collector power dissipation  
Junction temperature  
Storage temperature  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
150  
5  
Typ  
Max  
Unit  
V
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio *  
Collector-emitter saturation voltage  
Transition frequency  
IC = 100 µA, IB = 0  
IE = 10 µA, IC = 0  
V
VCB = −100 V, IE = 0  
VCE = −5 V, IC = −10 mA  
1  
330  
1  
µA  
hFE  
130  
70  
VCE(sat) IC = −30 mA, IB = −3 mA  
V
fT  
VCB = −10 V, IE = 10 mA, f = 200 MHz  
VCB = 6 V, IE = 0, f = 1 MHz  
MHz  
pF  
Collector output capacitance  
Cob  
5
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
S
hFE  
130 to 220  
185 to 330  
Note) The part number in the parenthesis shows conventional part number.  
Publication date: December 2003  
SJD00005CED  
1

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