2SA2140P

更新时间： 2024-01-10 20:48:16

品牌	Logo	应用领域
松下 - PANASONIC		晶体晶体管局域网
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3页	73K
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2SA2140P 数据手册

Power Transistors

2SA2140

Silicon PNP epitaxial planar type

Unit: mm

4.6 0.2

For power amplification

For TV VM circuit

9.9 0.3

2.9 0.2

φ 3.2 0.1

■ Features

• Satisfactory linearity of forward current transfer ratio h_FE

• High transition frequency (f_T)

• Full-pack package which can be installed to the heat sink with one

screw.

1.4 0.2

1.6 0.2

2.6 0.1

0.8 0.1

0.55 0.15

■ Absolute Maximum Ratings T_C= 25°C

2.54 0.30

5.08 0.50

Parameter

Symbol

Rating

−180

−6

Unit

Collector-base voltage (Emitter open) V_CBO

Collector-emitter voltage (Base open) V_CEO

Emitter-base voltage (Collector open) V_EBO

1: Base

2: Collector

3: Emitter

TO-220D-A1 Package

Collector current

I_C

I_CP

P_C

−1.5

Internal Connection

Peak collector current

Collector power dissipation

−3

T_a= 25°C

2.0

Junction temperature

Storage temperature

T_j

150

°C

T_stg

−55 to +150

■ Electrical Characteristics T_C= 25°C 3°C

Parameter

Symbol

V_CEO

I_CBO

Conditions

Min

Typ

Max

Unit

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage

Transition frequency

I_C= −10 mA, I_B= 0

−180

V_CB= −180 V, I_E= 0

V_EB= −6 V, I_C= 0

−100

240

µA



I_EBO

h_FE

V_CE= −5 V, I_C= − 0.1 A

V_CE(sat)I_C= −1 A, I_B= − 0.1 A

− 0.5

f_T

V_CE= −10 V, I_C= − 0.2 A, f = 10 MHz

100

MHz

Collector output capacitance

C_ob

V_CB= −10 V, I_E= 0, f = 1 MHz

(Common base, input open circuited)

Turn-on time

Storage time

Fall time

t_on

t_stg

t_f

I_C= − 0.4 A, Resistance loaded

I_B1= 0.04 A, I_B2= − 0.04 A

V_CC= 100 V

0.1

1.0

0.1

µs

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Rank classification

Rank

h_FE

60 to 140

120 to 240

Publication date: July 2004

SJD00316AED

12 3

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