C122A1-WC

更新时间： 2024-02-21 02:07:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		栅极触发装置可控硅整流器局域网
页数	文件大小	规格书
3页	69K
描述
8A, 100V, SCR, TO-220AB

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技术参数
数据手册

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C122A1-WC 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.30.00.80	风险等级：	5.84
外壳连接：	ANODE	标称电路换相断开时间：	50 µs
配置：	SINGLE	最大直流栅极触发电流：	25 mA
最大直流栅极触发电压：	1.5 V	最大维持电流：	30 mA
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	100 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	认证状态：	Not Qualified
最大均方根通态电流：	8 A	重复峰值关态漏电流最大值：	10 µA
断态重复峰值电压：	100 V	重复峰值反向电压：	100 V
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	触发设备类型：	SCR
Base Number Matches：	1

C122A1-WC 数据手册

SEMICONDUCTOR TECHNICAL DATA

Reverse Blocking Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as motor controls,

heating controls and power supplies; or wherever half-wave silicon gate-controlled,

solid-state devices are needed.

SCRs

8 AMPERES RMS

50 thru 800 VOLTS

•

Glass Passivated Junctions and Center Gate Fire for Greater Parameter

Uniformity and Stability

•

Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

•

Blocking Voltage to 800 Volts

Different Leadform Configurations,

Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information

CASE 221A-04

(TO-220AB)

STYLE 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

Rating

Symbol

Value

Unit

(1)

Repetitive Peak Off-State Voltage (T = 25 to 100°C, Gate Open)

DRM

RRM

Volts

Repetitive Peak Reverse Voltage

C122F1

C122A1

C122B1

C122D1

C122M1

C122N1

100

200

400

600

800

(1)

Peak Non-repetitive Reverse Voltage

RSM

Volts

C122F1

C122A1

C122B1

C122D1

C122M1

C122N1

200

300

500

700

800

Forward Current RMS

(All Conduction Angles)

75°C

Amps

T(RMS)

Peak Forward Surge Current

(1/2 Cycle, Sine Wave, 60 Hz)

TSM

I t

A s

Circuit Fusing Considerations

(t = 8.3 ms)

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)

RRM

DRM

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a

constant current source such that the voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data

12 3

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