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C122B1 PDF预览

C122B1

更新时间: 2024-11-04 22:34:23
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅整流器
页数 文件大小 规格书
3页 69K
描述
SILICON CONTROLLED RECTIFIERS

C122B1 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.82
外壳连接:ANODE标称电路换相断开时间:50 µs
配置:SINGLE最大直流栅极触发电流:25 mA
最大直流栅极触发电压:1.5 V最大维持电流:30 mA
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0最大漏电流:0.5 mA
通态非重复峰值电流:90 A元件数量:1
端子数量:3最大通态电压:1.8 V
最大通态电流:8000 A最高工作温度:100 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:8 A
重复峰值关态漏电流最大值:10 µA断态重复峰值电压:200 V
重复峰值反向电压:200 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
触发设备类型:SCRBase Number Matches:1

C122B1 数据手册

 浏览型号C122B1的Datasheet PDF文件第2页浏览型号C122B1的Datasheet PDF文件第3页 
SEMICONDUCTOR TECHNICAL DATA  
Reverse Blocking Triode Thyristors  
. . . designed primarily for full-wave ac control applications, such as motor controls,  
heating controls and power supplies; or wherever half-wave silicon gate-controlled,  
solid-state devices are needed.  
SCRs  
8 AMPERES RMS  
50 thru 800 VOLTS  
Glass Passivated Junctions and Center Gate Fire for Greater Parameter  
Uniformity and Stability  
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat  
Dissipation and Durability  
Blocking Voltage to 800 Volts  
Different Leadform Configurations,  
Suffix (2) thru (6) available, see Leadform Options (Section 4) for Information  
G
A
K
CASE 221A-04  
(TO-220AB)  
STYLE 3  
MAXIMUM RATINGS (T = 25°C unless otherwise noted.)  
J
Rating  
Symbol  
Value  
Unit  
(1)  
Repetitive Peak Off-State Voltage (T = 25 to 100°C, Gate Open)  
V
DRM  
V
RRM  
Volts  
J
Repetitive Peak Reverse Voltage  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
50  
100  
200  
400  
600  
800  
(1)  
Peak Non-repetitive Reverse Voltage  
V
RSM  
Volts  
C122F1  
C122A1  
C122B1  
C122D1  
C122M1  
C122N1  
75  
200  
300  
500  
700  
800  
Forward Current RMS  
(All Conduction Angles)  
T
C
75°C  
I
8
Amps  
Amps  
T(RMS)  
Peak Forward Surge Current  
(1/2 Cycle, Sine Wave, 60 Hz)  
I
90  
34  
TSM  
2
I t  
2
A s  
Circuit Fusing Considerations  
(t = 8.3 ms)  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, (cont.)  
RRM  
DRM  
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a  
constant current source such that the voltage ratings of the devices are exceeded.  
36  
Motorola Thyristor Device Data  

C122B1 替代型号

型号 品牌 替代类型 描述 数据表
MCR218-2G LITTELFUSE

功能相似

该硅控整流器主要用于半波交流控制应用,例如电机控制、加热控制与电源;或用于需要半波硅门控设

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