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RA07N3340M-101 PDF预览

RA07N3340M-101

更新时间: 2024-02-28 07:04:55
品牌 Logo 应用领域
三菱 - MITSUBISHI 射频和微波射频放大器微波放大器便携式无线高功率电源
页数 文件大小 规格书
8页 232K
描述
RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO

RA07N3340M-101 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLNG,1.0"H.SPACE
Reach Compliance Code:unknown风险等级:5.82
特性阻抗:50 Ω构造:MODULE
最大输入功率 (CW):14.77 dBm功能数量:1
最大工作频率:400 MHz最小工作频率:330 MHz
最高工作温度:90 °C最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY封装等效代码:FLNG,1.0"H.SPACE
电源:3.5,9.6 V射频/微波设备类型:NARROW BAND HIGH POWER
子类别:RF/Microwave Amplifiers技术:HYBRID
最大电压驻波比:4Base Number Matches:1

RA07N3340M-101 数据手册

 浏览型号RA07N3340M-101的Datasheet PDF文件第2页浏览型号RA07N3340M-101的Datasheet PDF文件第3页浏览型号RA07N3340M-101的Datasheet PDF文件第4页浏览型号RA07N3340M-101的Datasheet PDF文件第5页浏览型号RA07N3340M-101的Datasheet PDF文件第6页浏览型号RA07N3340M-101的Datasheet PDF文件第7页 
MITSUBISHI RF MOSFET MODULE  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RA07N3340M  
RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA07N3340M is a 7.5-watt RF MOSFET Amplifier  
2
3
Module for 9.6-volt portable radios that operate in the 330- to  
400-MHz range.  
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The output  
power and drain current increase as the gate voltage increases.  
With a gate voltage around 2.5V (minimum), output power and  
drain current increases substantially. The nominal output power  
becomes available at 3V (typical) and 3.5V (maximum). At  
VGG=3.5V, the typical gate current is 1 mA.  
1
4
5
This module is designed for non-linear FM modulation, but may  
also be used for linear modulation by setting the drain quiescent  
current with the gate voltage and controlling the output power  
with the input power.  
1
RF Input (Pin)  
2
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
FEATURES  
RF Output (Pout  
)
• Enhancement-Mode MOSFET Transistors  
(IDD0 @ VDD=9.6V, VGG=0V)  
RF Ground (Case)  
PACKAGE CODE: H46S  
• Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW  
ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW  
• Broadband Frequency Range: 330-400MHz  
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V  
• Module Size: 30 x 10 x 5.4 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
RoHS COMPLIANCE  
• RA07N3340M-101 is a RoHS compliant products.  
• RoHS compliance is indicate by the letter “G” after the Lot Marking.  
• This product include the lead in the Glass of electronic parts and the  
lead in electronic Ceramic parts.  
How ever ,it applicable to the following exceptions of RoHS Directions.  
1.Lead in the Glass of a cathode-ray tube, electronic parts, and  
fluorescent tubes.  
2.Lead in electronic Ceramic parts.  
ORDERING INFORMATION:  
ORDER NUMBER  
RA07N3340M-101  
SUPPLY FORM  
Antistatic tray,  
25 modules/tray  
RA07N3340M  
24 Jan 2006  
MITSUBISHI ELECTRIC  
1/8  

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