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24LC08BT-I/STG PDF预览
型号:
24LC08BT-I/STG
Datasheet下载:
下载Datasheet文件
产品描述:
8K IC SERIAL EEPROM
应用标签:
内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
文档页数/大小:
26页 / 368K
品牌Logo:
品牌名称:
MICROCHIP [ MICROCHIP TECHNOLOGY ]

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是否无铅
不含铅
是否Rohs认证
符合
生命周期
Active
IHS 制造商
MICROCHIP TECHNOLOGY INC
零件包装代码
TSSOP
包装说明
4.40 MM, ROHS COMPLIANT, PLASTIC, MO-153, TSSOP-8
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
HTS代码
8542.32.00.51
风险等级
5.17
Is Samacsys
N
最大时钟频率 (fCLK)
0.4 MHz
数据保留时间-最小值
200
耐久性
1000000 Write/Erase Cycles
I2C控制字节
1010XMMR
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.4 mm
内存密度
8192 bit
内存集成电路类型
EEPROM
内存宽度
8
湿度敏感等级
1
功能数量
1
端子数量
8
字数
1024 words
字数代码
1000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
1KX8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装等效代码
TSSOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
电源
3/5 V
认证状态
Not Qualified
座面最大高度
1.2 mm
串行总线类型
I2C
最大待机电流
0.000001 A
子类别
EEPROMs
最大压摆率
0.003 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3 mm
最长写入周期时间 (tWC)
5 ms
写保护
HARDWARE
Base Number Matches
1
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24AA08/24LC08B
8K I
2
C
Serial EEPROM
Device Selection Table
Part
Number
24AA08
24LC08B
Note 1:
V
CC
Range
1.8-5.5
2.5-5.5
Max Clock
Frequency
400 kHz
(1)
400 kHz
Temp
Ranges
I
I, E
Description:
The Microchip Technology Inc. 24AA08/24LC08B
(24XX08*) is a 8 Kbit Electrically Erasable PROM. The
device is organized as four blocks of 256 x 8-bit
memory with a 2-wire serial interface. Low voltage
design permits operation down to 1.8V, with standby
and active currents of only 1
μA
and 1 mA,
respectively. The 24XX08 also has a page write
capability for up to 16 bytes of data. The 24XX08 is
available in the standard 8-pin PDIP, surface mount
SOIC, TSSOP, 2x3 DFN and MSOP packages, and is
also available in the 5-lead SOT-23 package.
100 kHz for V
CC
<2.5V
Features:
• Single supply with operation down to 1.8V
• Low-power CMOS technology:
- 1 mA active current, typical
- 1
μA
standby current, typical (I-temp)
• Organized as 4 blocks of 256 bytes (4 x 256 x 8)
• 2-wire serial interface bus, I
2
C™ compatible
• Schmitt Trigger inputs for noise suppression
• Output slope control to eliminate ground bounce
• 100 kHz (<2.5V) and 400 kHz (≥2.5V) compatibility
• Self-timed write cycle (including auto-erase)
• Page write buffer for up to 16 bytes
• 2 ms typical write cycle time for page write
• Hardware write-protect for entire memory
• Can be operated as a serial ROM
• Factory programming (QTP) available
• ESD protection > 4,000V
• 1,000,000 erase/write cycles
• Data retention > 200 years
• 8-lead PDIP, SOIC, TSSOP, DFN and MSOP
packages
• 5-lead SOT-23 package
• Standard and Pb-free finishes available
• Available for extended temperature ranges:
- Industrial (I): -40°C to +85°C
- Automotive (E): -40°C to +125°C
Block Diagram
WP
HV
Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page
Latches
I/O
SCL
YDEC
SDA
V
CC
V
SS
Sense Amp.
R/W Control
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
SOT-23-5
SCL
Vss
SDA
Note:
1
2
3
4
Vcc
5
WP
A0 1
A1 2
A2 3
V
SS
4
8
7
6
5
V
CC
WP
SCL
A0
A1
A2
SOIC, TSSOP
1
2
3
4
DFN
8 V
CC
7 WP
6 SCL
5 SDA
8
7
6
5
V
CC
WP
SCL
SDA
SDA V
SS
Pins A0, A1 and A2 are not used by the 24XX08. (No
internal connections).
*24XX08 is used in this document as a generic part
number for the 24AA08/24LC08B devices.
©
2005 Microchip Technology Inc.
DS21710D-page 1