2N5639
N-Channel Switch
•
This device is designed for low level analog switchng, sample and hold
circuits and chopper stabilized amplifiers.
•
Sourced from process 51.
TO-92
1. Drain 2. Source 3. Gate
1
Absolute Maximum Ratings * T =25°C unless otherwise noted
C
Symbol
Parameter
Value
30
Units
V
V
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
V
V
DG
GS
-30
I
50
mA
°C
GF
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
J
STG
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristics
V
Gate-Source Breakdown Voltage
Gate Reverse Current
V
V
V
= 0, I = -10µA
-30
V
(BR)GSS
GSS
DS
GS
DS
G
I
I
= -15V, V = 0
-1.0
1.0
nA
nA
DS
Drain Cutoff Leakage Current
= 12V, V = 15V
GS
D(off)
On Characteristics
I
Zero-Gate Voltage Drain Current *
Drain-Source On Resistance
V
V
= 20V, I = 0
25
mA
DSS
DS
GS
GS
r
= 0V, I = 1.0mA
60
Ω
DS(on)
D
Small Signal Characteristics
r
Drain-Source On Resistance
Input Capacitance
V
V
V
= V = 0, f = 1.0kHz
60
10
Ω
ds(on)
DS
DS
DS
GS
C
C
= 0, V = 12V, f = 1.0MHz
pF
pF
iss
rss
GS
Reverse Transfer Capacitance
= 0V, V = 12V, f = 1.0MHz
4.0
GS
Switching Characteristics
t
t
t
t
Trun On Delay Time
Rise Time
V
V
R
= 10V, V = 0
GS(on)
6.0
8.0
10
ns
ns
ns
ns
d(on)
DD
= -12, I
= 12mA
GS(off)
D(on)
r
= 50Ω
G
Trun Off Delay Time
d(off)
Fall Time
20
f
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Max.
Units
mW
mW/°C
P
Total Device Dissipation
Derate above 25°C
350
2.8
D
R
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
125
357
°C/W
θJC
θJA
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, July 2003