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93LC66B-I/SNA25 PDF预览

93LC66B-I/SNA25

更新时间: 2024-11-19 21:07:35
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
30页 550K
描述
256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8, 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8

93LC66B-I/SNA25 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.06
Is Samacsys:N其他特性:1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS
最大时钟频率 (fCLK):1 MHz数据保留时间-最小值:200
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.9 mm内存密度:4096 bit
内存集成电路类型:EEPROM内存宽度:16
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256X16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:MICROWIRE
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.8 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3.9 mm
最长写入周期时间 (tWC):6 msBase Number Matches:1

93LC66B-I/SNA25 数据手册

 浏览型号93LC66B-I/SNA25的Datasheet PDF文件第2页浏览型号93LC66B-I/SNA25的Datasheet PDF文件第3页浏览型号93LC66B-I/SNA25的Datasheet PDF文件第4页浏览型号93LC66B-I/SNA25的Datasheet PDF文件第5页浏览型号93LC66B-I/SNA25的Datasheet PDF文件第6页浏览型号93LC66B-I/SNA25的Datasheet PDF文件第7页 
93AA66A/B/C, 93LC66A/B/C,  
93C66A/B/C  
4K Microwire Compatible Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
ORG Pin  
Word Size  
Temp Ranges  
Packages  
93AA66A  
93AA66B  
93LC66A  
93LC66B  
93C66A  
1.8-5.5  
1.8-5-5  
2.5-5.5  
2.5-5.5  
4.5-5.5  
4.5-5.5  
1.8-5.5  
2.5-5.5  
4.5-5.5  
No  
No  
8-bit  
16-bit  
I
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, OT, MC  
P, SN, ST, MS, MC  
I
No  
8-bit  
I, E  
I, E  
I, E  
I, E  
I
No  
16-bit  
No  
8-bit  
93C66B  
No  
16-bit  
93AA66C  
93LC66C  
93C66C  
Yes  
Yes  
Yes  
8- or 16-bit  
8- or 16-bit  
8- or 16-bit  
I, E  
I, E  
P, SN, ST, MS, MC  
P, SN, ST, MS, MC  
Features:  
Pin Function Table  
Name  
Function  
• Low-Power CMOS Technology  
• ORG Pin to Select Word Size for ‘66C’ Version  
• 512 x 8-bit Organization ‘A’ Devices (no ORG)  
• 256 x 16-bit organization ‘B’ Devices (no ORG)  
CS  
Chip Select  
CLK  
DI  
Serial Data Clock  
Serial Data Input  
Serial Data Output  
Ground  
• Self-tImed Erase/Write Cycles (including  
Auto-Erase)  
DO  
VSS  
NC  
• Automatic Erase All (ERAL) Before Write All  
(WRAL)  
No internal connection  
Memory Configuration  
Power Supply  
ORG  
VCC  
• Power-On/Off Data Protection Circuitry  
• Industry Standard 3-Wire Serial I/O  
• Device Status Signal (Ready/Busy)  
• Sequential Read Function  
Description:  
• 1,000,000 Erase/Write Cycles  
• Data Retention > 200 Years  
The Microchip Technology Inc. 93XX66A/B/C devices  
are 4Kbit low-voltage serial Electrically Erasable  
PROMs (EEPROM). Word-selectable devices such as  
the 93AA66C, 93LC66C or 93C66C are dependent  
upon external logic levels driving the ORG pin to set  
word size. For dedicated 8-bit communication, the  
93XX66A devices are available, while the 93XX66B  
devices provide dedicated 16-bit communication.  
Advanced CMOS technology makes these devices  
ideal for low-power, nonvolatile memory applications.  
The entire 93XX Series is available in standard  
packages including 8-lead PDIP and SOIC, and  
advanced packaging including 8-lead MSOP, 6-lead  
SOT-23, 8-lead 2x3 DFN and 8-lead TSSOP. All  
packages are Pb-free (Matte Tin) finish.  
• Pb-free and RoHS Compliant  
Temperature Ranges Supported:  
- Industrial (I)  
-40°C to +85°C  
- Automotive (E) -40°C to +125°C  
© 2008 Microchip Technology Inc.  
DS21795D-page 1  

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