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93LC56AXT-E/MCG

更新时间： 2024-02-18 13:11:17

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
22页	102K
描述
256 X 8 MICROWIRE BUS SERIAL EEPROM, DSO8, 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, MO-229, DFN-8

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93LC56AXT-E/MCG 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Not Recommended	零件包装代码：	SOIC
包装说明：	0.150 INCH, PLASTIC, SOIC-8	针数：	8
Reach Compliance Code：	compliant	风险等级：	5.17
Is Samacsys：	N	其他特性：	100K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS
备用内存宽度：	8	最大时钟频率 (fCLK)：	2 MHz
数据保留时间-最小值：	200	耐久性：	10000000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G8	JESD-609代码：	e3
长度：	4.9 mm	内存密度：	2048 bit
内存集成电路类型：	EEPROM	内存宽度：	16
湿度敏感等级：	1	功能数量：	1
端子数量：	8	字数：	128 words
字数代码：	128	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128X16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	3/5 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
串行总线类型：	MICROWIRE	最大待机电流：	0.00003 A
子类别：	EEPROMs	最大压摆率：	0.003 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	2.5 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3.9 mm
最长写入周期时间 (tWC)：	10 ms	写保护：	SOFTWARE
Base Number Matches：	1

93LC56AXT-E/MCG 数据手册

Using the 93LC56 and 93LC66

AN560

Using the 93LC56 and 93LC66

3-Wire Byte Write Program

INTRODUCTION

– Delay Routine

The Microchip Technology Inc. 93LC56/66 are low-

power 3-wire non-volatile memories and are suitable for

manyembeddedsystemcodeanddatastorageapplica-

tions. Thesedevicesareeasilyinterfacedtomostmicro-

controllers in today's market place, but Microchip’s 8-bit

RISC series PIC16CXX offers the best code density of

any microcontroller on the market today. Using the

PIC16C54, the assembly programs contained in this

application note have been fully tested and provide the

correct timing and 3-wire sequences to fully operate the

93LC56/66 in a PIC16CXX-based embedded applica-

tion. The PIC16C54 was clocked at a 10MHz frequency.

This application note is intended to provide the engineer

with readily available stand-alone code modules to

accomplishallofthenecessaryfunctionstoutilize these

devices in a low power application using the efficient

PIC16C54 microcontroller.

– Start Bit Routine

– Bit Out Routine

– Transmit Data Routine

– Power-up Routine

– Erase/Write Enable Routine (EWEN)

– Byte Write Routine

– Erase/Write Disable Routine (EWDS)

3-Wire Byte Write with Data Polling Program

– Data Polling Delay Routine

– Start Bit Routine

– Bit Out Routine

The 93 series of devices have essentially four I/O pins:

– Transmit Data Routine

– Power-up Routine

CLK

Chip Select

Clock

– Erase/Write Enable Routine

– Write Routine

Data In

Data Out

– Erase/Write Disable Routine (EWDS)

This series of devices use a series of commands to

accomplish the normal memory functions. These are

READ, WRITE, EWEN, ERASE, ERAL, WRAL, EWDS.

For a more detailed discussion of the function of these

devicesreferencetheappropriatedatasheetandAN536,

also published by Microchip Technology.

3-Wire Sequential Read Program

– Delay Routine

– Start Bit Routine

– Bit In Routine

– Receive Data Routine

– Bit Out Routine

– Transmit Data Routine

– Power-up Routine

– Read Routine

The following programs are included in this application

note and are fully functional stand-alone modules. They

are intended for use by those who are not already

familiar with interfacing a PIC16CXX microcontroller to

a 93 series device. For those with more experience,

please refer to application note AN530.

3-Wire Byte Read Program

– Start Bit Routine

– Receive Data Routine

– Bit Out Routine

Author:

Bruce Negley

Memory Products Division

– Transmit Data Routine

– Power-up Routine

– Read Routine

DS00560D-page 1

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