93LC46-ISN

更新时间： 2024-01-12 16:21:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
12页	176K
描述
1K/2K/4K 2.0V Microwire Serial EEPROM

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技术参数
数据手册

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93LC46-ISN 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Not Recommended	零件包装代码：	SOIC
包装说明：	SOP, SOP8,.25	针数：	8
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	Factory Lead Time：	9 weeks
风险等级：	5.24	Is Samacsys：	N
其他特性：	3 WIRE INTERFACE; AUTOMATIC WRITE; ERAL AT 4.5V TO 6.0V	备用内存宽度：	8
最大时钟频率 (fCLK)：	2 MHz	数据保留时间-最小值：	200
耐久性：	1000000 Write/Erase Cycles	JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3	长度：	4.9 mm
内存密度：	1024 bit	内存集成电路类型：	EEPROM
内存宽度：	16	湿度敏感等级：	3
功能数量：	1	端子数量：	8
字数：	64 words	字数代码：	64
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	64X16
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOP
封装等效代码：	SOP8,.25	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	并行/串行：	SERIAL
峰值回流温度（摄氏度）：	260	电源：	3/5 V
认证状态：	Not Qualified	座面最大高度：	1.75 mm
串行总线类型：	MICROWIRE	最大待机电流：	0.00003 A
子类别：	EEPROMs	最大压摆率：	0.003 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	2.5 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	宽度：	3.9 mm
最长写入周期时间 (tWC)：	10 ms	写保护：	SOFTWARE
Base Number Matches：	1

93LC46-ISN 数据手册

93LC46/56/66

3.2

Data In (DI) and Data Out (DO)

3.0

FUNCTIONAL DESCRIPTION

When it is connected to ground, the (x8) organization is

selected. When the ORG pin is connected to Vcc, the

(x16) organization is selected. Instructions, addresses

and write data are clocked into the DI pin on the rising

edge of the clock (CLK).The DO pin is normally held in

a HIGH-Z state, except when reading data from the

device or when checking the READY/BUSY status dur-

ing a programming operation. The READY/BUSY

status can be veriﬁed during an ERASE/WRITE opera-

tion by polling the DO pin; DO low indicates that pro-

gramming is still in progress, while DO high indicates

the device is ready. The DO will enter the HIGH-Z state

on the falling edge of the CS.

It is possible to connect the Data In (DI) and Data Out

(DO) pins together. However, with this conﬁguration, if

A0 is a logic-high level, it is possible for a “bus conﬂict”

to occur during the “dummy zero” that precedes the

READ operation. Under such a condition the voltage

level seen at DO is undeﬁned and will depend upon the

relative impedances of Data Out, and the signal source

driving A0.The higher the current sourcing capability of

A0, the higher the voltage at the DO pin.

3.3

Data Protection

During power-up, all programming modes of operation

are inhibited until Vcc has reached a level greater than

1.4V. During power-down, the source data protection

circuitry acts to inhibit all programming modes when

Vcc has fallen below 1.4V at nominal conditions.

3.1

START Condition

The START bit is detected by the device if CS and DI

are both high with respect to the positive edge of CLK

for the ﬁrst time.

The ERASE/WRITE Disable (EWDS) and ERASE/

WRITE Enable (EWEN) commands give additional pro-

tection against accidentally programming during nor-

mal operation.

Before a START condition is detected, CS, CLK, and DI

may change in any combination (except to that of a

START condition), without resulting in any device oper-

ation (READ, WRITE, ERASE, EWEN, EWDS, ERAL,

and WRAL). As soon as CS is high, the device is no

longer in the standby mode.

After power-up, the device is automatically in the

EWDS mode. Therefore, an EWEN instruction must be

performed before any ERASE or WRITE instruction can

be executed.

An instruction following a START condition will only be

executed if the required amount of opcodes,

addresses, and data bits for any particular instruction is

clocked in.

After execution of an instruction (i.e., clock in or out of

the last required address or data bit) CLK and DI

become don't care bits until a new START condition is

detected.

FIGURE 3-1: SYNCHRONOUS DATA TIMING

VIH

TCSS

TCKH

TCKL

VIL

TCSH

VIH

CLK

VIL

TDIH

TDIS

VIH

VIL

TCZ

TPD

VOH

(READ)

TCZ

VOL

VOH

TSV

(PROGRAM)

STATUS VALID

VOL

1997 Microchip Technology Inc.

DS11168L-page 5

1 2 3 456 7 8...12

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