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8TQ100GSTRRPBF PDF预览

8TQ100GSTRRPBF

更新时间: 2024-01-31 00:56:15
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 111K
描述
Schottky Rectifier, 8 A

8TQ100GSTRRPBF 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:R-PSSO-G2
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.17Is Samacsys:N
其他特性:LEAKAGE CURRENT IS NOT AT 25 DEG C应用:GENERAL PURPOSE
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.58 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:230 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向电流:7000 µA
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
Base Number Matches:1

8TQ100GSTRRPBF 数据手册

 浏览型号8TQ100GSTRRPBF的Datasheet PDF文件第2页浏览型号8TQ100GSTRRPBF的Datasheet PDF文件第3页浏览型号8TQ100GSTRRPBF的Datasheet PDF文件第4页浏览型号8TQ100GSTRRPBF的Datasheet PDF文件第5页浏览型号8TQ100GSTRRPBF的Datasheet PDF文件第6页 
8TQ...GSPbF  
Vishay High Power Products  
Schottky Rectifier, 8 A  
FEATURES  
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
Base  
cathode  
2
Available  
RoHS*  
COMPLIANT  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
• Guard ring for enhanced ruggedness and long term  
reliability  
3
1
D2PAK  
N/C  
Anode  
• Lead (Pb)-free (“PbF” suffix)  
• Designed and qualified for industrial level  
DESCRIPTION  
PRODUCT SUMMARY  
The 8TQ Schottky rectifier series has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 175 °C junction  
temperature. Typical applications are in switching power  
supplies, converters, freewheeling diodes, and reverse  
battery protection.  
IF(AV)  
8 A  
80/100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
8
UNITS  
Rectangular waveform  
A
V
Range  
80/100  
850  
tp = 5 µs sine  
8 Apk, TJ = 125 °C  
Range  
A
VF  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
8TQ080GSPbF  
8TQ100GSPbF  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
80  
100  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 157 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
8
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 µs sine or 3 µs rect. pulse  
850  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
230  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 94264  
Revision: 17-Apr-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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