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80SQ045N PDF预览

80SQ045N

更新时间: 2024-02-17 09:47:27
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管瞄准线功效
页数 文件大小 规格书
4页 62K
描述
Axial Lead Rectifier

80SQ045N 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DO-204
包装说明:O-PALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.31
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.44 VJEDEC-95代码:DO-204AR
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:2400 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:45 V最大反向电流:15000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

80SQ045N 数据手册

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80SQ045N  
Preferred Device  
Axial Lead Rectifier  
These devices employ the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlap  
contact. Ideally suited for use as rectifiers in low−voltage,  
high−frequency inverters, free wheeling diodes, and polarity  
protection diodes.  
http://onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
High Current Capability  
8.0 AMPERES  
Low Stored Charge, Majority Carrier Conduction  
Low Power Loss/High Efficiency  
Highly Stable Oxide Passivated Junction  
Guard−Ring for Stress Protection  
Low Forward Voltage  
High Surge Capacity  
These are Pb−Free Devices*  
AXIAL LEAD  
CASE 267−05  
(DO−201AD)  
STYLE 1  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.1 Gram (Approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
MARKING DIAGRAM  
Lead and Mounting Surface Temperature for Soldering Purposes:  
220°C Max. for 10 Seconds, 1/16from Case  
Polarity: Cathode indicated by Polarity Band  
80SQ  
045N  
YYWW G  
G
ESD Protection: Human Body Model > 4000 V (Class 3)  
Machine Model > 400 V (Class C)  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
YY  
= Year  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
45  
V
RRM  
WW = Work Week  
V
RWM  
G
= Pb−Free Package  
V
I
R
(Note: Microdot may be in either location)  
Average Rectified Forward Current T = 75°C  
8.0  
A
A
L
O
(Psi = 12°C/W, P.C. Board Mounting, Note 2)  
JL  
ORDERING INFORMATION  
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load Conditions  
Halfwave, Single Phase, 60 Hz)  
I
140  
FSM  
Device  
Package  
Shipping  
80SQ045N  
Axial Lead*  
500 Units/Box  
Operating and Storage Junction Tempera-  
ture Range (Reverse Voltage Applied)  
T , T  
−65 to +125  
10  
°C  
J
stg  
80SQ045NG  
80SQ045NRL  
Axial Lead*  
Axial Lead*  
500 Units/Box  
Voltage Rate of Change (Rated V )  
dv/dt  
V/ns  
R
1500/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
80SQ045NRLG Axial Lead* 1500/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*This package is inherently Pb−Free.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
May, 2006 − Rev. 3  
80SQ045N/D  

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