80SQ030 - 80SQ100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 30 - 100V
CURRENT: 8 .0 A
Features
!
!
Metal of silicon rectifier , majority carrier conduction
Guard ring for transient protection
Low power loss,high efficiency
Highcurrentcapabiltiy,lowVF
!
!
A
B
A
High surge capacity
Plastic package has UL flammability classification
94V-0
!
!
C
D
Mechanical Data
DO-201AD
Min
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Dim
A
Max
¾
25.40
7.20
!
!
!
!
9.50
1.30
5.30
B
C
1.20
D
4.80
Marking: Type Number
All Dimensions in mm
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
Unit
Characteristic
Symbol
80SQ030 80SQ035 80SQ040 80SQ045 80SQ050 80SQ060 80SQ080 80SQ100
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
21
30
35
24.5
35
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
100
70
V
V
V
Maximum DC Blocking Voltage
100
Maximum Average Forward
8.0
I(AV)
IFSM
A
A
Rectified Current@Tc=95 ℃
Peak Forward Surage Current 8.3ms single half
sine-wave super imposed on rated load(JEDEC
Method)
380
0.55
0.7
0.8
Peak Forward Voltage at 8.0ADC(Note1)
Maximum DC Reverse Current @Tj=25℃
at Rated DC Bolcking Voltage @Tj=100℃
Tyical Junction Capacitance (Note2)
Tyical Thermal Resistance (Note3)
Operating Temperature Range
VF
IR
V
0.5
50
mA
900
8.0
CJ
PF
℃/w
℃
R JC
θ
-55 to+150
-55 to+150
TJ
Storage Temperature Range
TSTG
℃
NOTES:1.300us Pulse Width, 2%Dudy Cycle.
2.Measured at 1.0 MHZ and applied reverse voltage of 4.0VDC.
3.Thermal Resistance Junction to Case.
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