Datasheet > 80-M2122PA150M7-K708F7

80-M2122PA150M7-K708F7

更新时间： 2023-09-03 20:29:48

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	6612K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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80-M2122PA150M7-K708F70

datasheet

Half-Bridge Switch Characteristics

figure 1.

IGBT

figure 2.

IGBT

Typical output characteristics

I_C= f(V_CE

)

I_C= f(V_CE)

400

V_GE

7 V

8 V

9 V

10 V

11 V

12 V

13 V

14 V

15 V

16 V

17 V

300

200

100

300

200

100

_CE(V)

V_CE(V)

t_p

250

μs

250

150

μs

°C

25 °C

V_GE

T_j=

125 °C

150 °C

T_j:

V_GEfrom 7 V to 17 V in steps of 1 V

figure 3.

IGBT

figure 4.

IGBT

Typical transfer characteristics

Transient thermal impedance as a function of pulse width

I_C= f(V_GE

)

Z_th(j-s)= f(t_p)

150

125

100

-1

-2

0,5

0,2

0,1

-3

0,05

0,02

0,01

0,005

-4

-5

-4

-3

-2

-1

0,0

2,5

5,0

7,5

10,0

12,5

t_p(s)

_GE(V)

t_p

250

μs

D =

t_p/ T

0,253

25 °C

V_CE

125 °C

150 °C

R_th(j-s)=

T_j:

K/W

IGBT thermal model values

R (K/W)

τ (s)

5,78E-02

1,16E-01

5,63E-02

1,65E-02

6,13E-03

1,92E+00

2,60E-01

8,69E-02

1,02E-02

8,05E-04

01 May. 2022 / Revision 2

1...3 4 567 8 9...18

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