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7P24FLE211C15 PDF预览

7P24FLE211C15

更新时间： 2024-01-21 12:46:05
品牌 Logo 应用领域
美高森美 - MICROSEMI 内存集成电路存储闪存
页数 文件大小 规格书
13页 238K
描述
Flash Card, 12MX16, 150ns, CARD-68

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7P24FLE211C15 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：CARD-68Reach Compliance Code：unknown
风险等级：5.88最长访问时间：150 ns
备用内存宽度：8JESD-30 代码：R-XUUC-N68
内存密度：268435456 bit内存集成电路类型：FLASH CARD
内存宽度：16功能数量：1
端子数量：68字数：16777216 words
字数代码：16000000工作模式：ASYNCHRONOUS
最高工作温度：70 °C最低工作温度：
组织：16MX16封装主体材料：UNSPECIFIED
封装代码：DIE封装形状：RECTANGULAR
封装形式：UNCASED CHIP并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：5 V
认证状态：Not Qualified最大供电电压 (Vsup)：5.25 V
最小供电电压 (Vsup)：4.75 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
类型：NOR TYPEBase Number Matches：1

7P24FLE211C15 数据手册

 浏览型号7P24FLE211C15的Datasheet PDF文件第2页浏览型号7P24FLE211C15的Datasheet PDF文件第3页浏览型号7P24FLE211C15的Datasheet PDF文件第4页浏览型号7P24FLE211C15的Datasheet PDF文件第6页浏览型号7P24FLE211C15的Datasheet PDF文件第7页浏览型号7P24FLE211C15的Datasheet PDF文件第8页 
PCMCIA Flash Memory Card  
FLE Series  
White Electronic Designs  
CARD SIGNAL DESCRIPTION  
Symbol  
Type  
Name and Function  
A0 - A25  
INPUT  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up to 64MB of memory on the card. Signal A0 is not  
used in word access mode. A25 is the most significant bit  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUTPUT  
INPUT  
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the bi-directional databus. DQ15 is the MSB.  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2# enables odd byte accesses. Multiplexing A0,  
CE1# and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.  
OE#  
INPUT  
OUTPUT ENABLE: Active low signal gating read data from the memory card.  
WRITE ENABLE: Active low signal gating write data to the memory card.  
WE#  
INPUT  
RDY/BSY#  
OUTPUT  
READY/BUSY OUTPUT: Indicates status of internally timed erase or program algorithms. A high output indicates that  
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy  
with internally timed erase or write activities.  
CD1#, CD2#  
WP  
OUTPUT  
OUTPUT  
CARD DETECT 1 and 2: Provide card insertion detection. These signals are connected to ground internally on the  
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.  
WRITE PROTECT: Write protect reflects the status of the Write Protect switch on the memory card. WP set to high  
= write protected, providing internal hardware write lockout to the Flash array. If card does not include optional write  
protect switch, this signal will be pulled low internally indicating write protect = “off”.  
VPP1, VPP2  
VCC  
N.C.  
PROGRAM/ERASE POWER SUPPLY: Not connected for 5V only card.  
CARD POWER SUPPLY: 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
GND  
REG#  
INPUT  
INPUT  
ATTRIBUTE MEMORY SELECT: provides access to Flash memory card registers and Card Information Structure in  
the Attribute Memory Plane.  
RST  
RESET: Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for  
the memory array.  
WAIT#  
OUTPUT  
OUTPUT  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No wait states are generated.  
BVD1, BVD2  
VS1, VS2  
BATTERY VOLTAGE DETECT: These signals are pulled high to maintain SRAM card compatibility.  
VOLTAGE SENSE: Notifies the host socket of the card’s VCC requirements. VS1 and VS2 are open to indicate a 5V  
card has been inserted.  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven or left floating  
August 2000  
Rev. 4  
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com  
12345678...13

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