7MBR15VKC060-50
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T j= 25oC / chip
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
T j= 150oC / chip
30
30
VGE=20V
12V
VGE=20V
15V
15V
25
20
15
10
5
25
20
15
10
5
12V
10V
10V
8V
8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: V CE[V]
Collector-Emitter voltage: V CE[V]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
T j= 25oC / chip
V GE=15V / chip
30
8
6
4
2
0
Tj=150oC
Tj=25oC
25
20
15
10
5
Tj=125oC
IC= 30A
IC= 15A
IC= 8A
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter voltage: V CE[V]
Gate - Emitter voltage: V GE [V]
[ Inverter ]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic gate charge (typ.)
V CC=300V , I C=15A , T j=25oC
V GE=0V, f = 1MHz, T j= 25oC
10
VCE
Cies
VGE
1
Cres
0.1
Coes
0.01
-50
-25
0
25
50
0
10
20
30
Collector - Emitter voltage: V CE [V]
Gate charge: Q G[nC]
FM6M1529c
2021/06
5