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7MBP100VDA120-50 PDF预览

7MBP100VDA120-50

更新时间： 2024-02-07 12:56:48
品牌 Logo 应用领域
富士电机 - FUJI 双极性晶体管
页数 文件大小 规格书
11页 690K
描述
IGBT MODULE (V series) 1200V / 100A / IPM

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7MBP100VDA120-50 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.58
接口集成电路类型：BUFFER OR INVERTER BASED PERIPHERAL DRIVERBase Number Matches：1

7MBP100VDA120-50 数据手册

 浏览型号7MBP100VDA120-50的Datasheet PDF文件第1页浏览型号7MBP100VDA120-50的Datasheet PDF文件第3页浏览型号7MBP100VDA120-50的Datasheet PDF文件第4页浏览型号7MBP100VDA120-50的Datasheet PDF文件第5页浏览型号7MBP100VDA120-50的Datasheet PDF文件第6页浏览型号7MBP100VDA120-50的Datasheet PDF文件第7页 
7MBP100VDA120-50  
IGBT Modules  
http://www.fujielectric.com/products/semiconductor/  
Electrical Characteristics (T  
j
=25ºC, VCC=15V unless otherwise specified)  
Symbol Conditions  
Items  
Min.  
Typ.  
Max.  
Units  
Collector Current at off signal input  
Collector-Emitter saturation voltage  
I
CES  
V
CE=1200V  
-
-
1.0  
2.40  
-
mA  
V
Terminal  
Chip  
-
-
V
V
CE(sat)  
I
I
C
=100A  
-
1.70  
V
Terminal  
Chip  
-
-
2.70  
-
V
Forward voltage of FWD  
F
F=100A  
-
2.10  
V
Collector Current at off signal input  
Collector-Emitter saturation voltage  
I
CES  
V
CE=1200V  
-
-
1.0  
2.15  
-
mA  
V
Terminal  
Chip  
-
-
V
CE(sat)  
I
I
C
=50A  
-
1.70  
V
Terminal  
Chip  
-
-
-
2.95  
-
V
Forward voltage of FWD  
Switching time  
V
F
C=50A  
2.40  
V
t
on  
off  
1.1  
-
-
-
-
µs  
µs  
VDC=600V, T  
j
=125ºC, I  
C=100A  
t
2.1  
t
rr  
V
DC=600V, I  
C
=100A  
-
-
0.3  
µs  
Supply current of P-side pre-driver (per one unit)  
Supply current of N-side pre-driver  
I
ccp  
ccn  
-
-
-
-
21  
87  
1.6  
1.9  
-
mA  
mA  
V
Switching Frequency= 0-15kHz  
=-20~110ºC  
T
C
I
V
inth(on)  
inth(off)  
ON  
1.2  
1.5  
150  
75  
-
1.4  
1.7  
-
Input signal threshold voltage  
Vin-GND  
V
OFF  
V
Inverter  
Brake  
A
Over Current Protection  
Level  
I
OC  
T
j
=125ºC  
-
-
A
Over Current Protection Delay time  
Short Circuit Protection Delay time  
t
dOC  
SC  
T
T
j
j
=125ºC  
=125ºC  
5
-
µs  
µs  
ºC  
ºC  
V
t
-
2
3
IGBT Chips Over Heating Protection Temperature Level TjOH  
Surface of IGBT Chips  
150  
-
-
-
Over Heating Protection Hysteresis  
Under Voltage Protection Level  
T
jH  
20  
-
-
V
UV  
H
11.0  
0.2  
1.0  
2.5  
5.0  
960  
12.5  
-
Under Voltage Protection Hysteresis  
V
0.5  
2.0  
4.0  
8.0  
1265  
V
t
t
t
ALM(OC)  
ALM(UV)  
ALM(TjOH)  
2.4  
4.9  
11.0  
1570  
ms  
ms  
ms  
Ω
ALM-GND  
Alarm Signal Hold Time  
VCC  
10V  
T
C
=-20~110ºC  
Resistance for current limit  
R
ALM  
Thermal Characteristics (T = 25ºC)  
C
Items  
Symbol  
Min.  
Typ.  
Max.  
0.30  
0.52  
0.50  
0.95  
-
Units  
IGBT  
FWD  
IGBT  
FWD  
R
R
R
R
R
th(j-c)Q  
th(j-c)D  
th(j-c)Q  
th(j-c)D  
th(c-f)  
-
-
-
-
-
-
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Inverter  
Brake  
-
Junction to Case Thermal Resistance (*10)  
-
-
Case to Fin Thermal Resistance with Compound  
0.05  
Note *10: For 1device, the measurement point of the case is just under the chip.  
Noise Immunity (VDC=600V, VCC=15V)  
Items  
Conditions  
Pulse width 1μs, polarity ±, 10 min.  
Judge : no over-current, no miss operating  
Min.  
±2.0  
Typ.  
Max.  
Units  
Common mode rectangular noise  
-
-
kV  
Recommended Operating Conditions  
Items  
Symbol  
Min.  
-
Typ.  
Max.  
800  
16.5  
20  
Units  
V
DC Bus Voltage  
VDC  
-
Power Supply Voltage of Pre-Driver  
Switching frequency of IPM  
VCC  
13.5  
-
15.0  
V
fSW  
-
-
-
kHz  
µs  
Arm shoot through blocking time for IPM's input signal  
Screw Torque (M4)  
t
dead  
1.0  
1.3  
-
-
1.7  
Nm  
2
1234567...11

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