Datasheet > 7KL0641DAHI02

7KL0641DAHI02

更新时间： 2024-02-29 01:32:46

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		动态存储器
页数	文件大小	规格书
29页	770K
描述
HyperRAMâ¢ Self-Refresh DRAM 3.0V/1.8V 64 Mb (8 MB)

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7KL0641DAHI02 数据手册

ADVANCE

S27KL0641, S27KS0641

11. Errata

This section describes the errata for the S27KL0641 and S27KS0641 Family. Details include errata trigger conditions, scope of

impact, available workarounds, and silicon revision applicability. Contact your local Cypress Sales Representative if you have

questions.

Part Number

Device Characteristics

S27KL0641, S27KS0641

HyperRAM Self-Refresh DRAM

S27KL0641 and S27KS0641 Qualification Status

Product Status: Sampling

S27KL0641, S27KS0641 Errata Summary

The following table defines the errata applicability to available S27KL0641 and S27KS0641S family devices.

Items

Part Number

Silicon Revision

Fix Status

[1]. Variable Latency Mode Does Not

Function

S27KL0641

S27KS0641

Will be fixed in production silicon

1. Variable Latency Mode Does Not Function



Problem Definition

The RWDS signal may not correctly indicate when additional initial latency is being inserted when the device is configured

for variable initial latency.



Parameters Affected

Initial latency count.

Trigger Condition

Use of variable latency configuration by setting configuration register 0 bit 3 to 0.

Scope of Impact

Intermittent failure of read data to start transferring on the bus when expected, based on the latency count indicated by

RWDS during the command-address cycles.



Workaround

Use the default fixed latency configuration or use RWDS transitions as the indication for when to capture the first and

following read data transfers.

Fix Status

Will be fixed in production silicon.

Document Number: 001-97964 Rev. *E

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