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7C136-15 PDF预览

7C136-15

更新时间: 2022-11-25 14:04:40
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
18页 341K
描述
2Kx8 Dual-Port Static RAM

7C136-15 数据手册

 浏览型号7C136-15的Datasheet PDF文件第3页浏览型号7C136-15的Datasheet PDF文件第4页浏览型号7C136-15的Datasheet PDF文件第5页浏览型号7C136-15的Datasheet PDF文件第7页浏览型号7C136-15的Datasheet PDF文件第8页浏览型号7C136-15的Datasheet PDF文件第9页 
CY7C132/CY7C136  
CY7C142/CY7C146  
[6, 11]  
Switching Characteristics Over the Operating Range  
(continued)  
7C132-35  
7C136-35  
7C142-35  
7C146-35  
7C132-45  
7C136-45  
7C142-45  
7C146-45  
7C132-55  
7C136-55  
7C142-55  
7C146-55  
[15]  
WRITE CYCLE  
t
t
t
t
t
t
t
t
t
t
Write Cycle Time  
35  
45  
55  
40  
40  
2
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
WC  
CE LOW to Write End  
30  
30  
2
35  
35  
2
SCE  
AW  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
R/W Pulse Width  
HA  
0
0
0
SA  
25  
15  
0
30  
20  
0
30  
20  
0
PWE  
SD  
Data Set-Up to Write End  
Data Hold from Write End  
HD  
[10]  
R/W LOW to High Z  
20  
20  
25  
HZWE  
LZWE  
[10]  
R/W HIGH to Low Z  
0
0
0
BUSY/INTERRUPT TIMING  
t
t
t
t
t
t
t
t
t
BUSY LOW from Address Match  
20  
20  
20  
20  
25  
25  
25  
25  
30  
30  
30  
30  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
BLA  
BHA  
BLC  
BHC  
PS  
[16]  
BUSY HIGH from Address Mismatch  
BUSY LOW from CE LOW  
[16]  
BUSY HIGH from CE HIGH  
Port Set Up for Priority  
5
0
5
0
5
0
[17]  
R/W LOW after BUSY LOW  
WB  
R/W HIGH after BUSY HIGH  
BUSY HIGH to Valid Data  
30  
35  
35  
WH  
35  
45  
45  
BDD  
DDD  
Write Data Valid to Read Data Valid  
Note  
18  
Note  
18  
Note  
18  
t
Write Pulse to Data Delay  
Note  
18  
Note  
18  
Note  
18  
ns  
WDD  
[19]  
INTERRUPT TIMING  
t
t
t
t
t
t
R/W to INTERRUPT Set Time  
25  
25  
25  
25  
25  
25  
35  
35  
35  
35  
35  
35  
45  
45  
45  
45  
45  
45  
ns  
ns  
ns  
ns  
ns  
ns  
WINS  
EINS  
INS  
CE to INTERRUPT Set Time  
Address to INTERRUPT Set Time  
[16]  
OE to INTERRUPT Reset Time  
CE to INTERRUPT Reset Time  
OINR  
EINR  
INR  
[16]  
[16]  
Address to INTERRUPT Reset Time  
Notes:  
11. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading of the specified  
OL/IOH, and 30-pF load capacitance.  
I
12. AC test conditions use VOH = 1.6V and VOL = 1.4V.  
13. At any given temperature and voltage condition for any given device, tHZCE is less than tLZCE and tHZOE is less than tLZOE  
.
14.  
tLZCE, tLZWE, tHZOE, tLZOE, tHZCE, and tHZWE are tested with CL = 5pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.  
15. The internal write time of the memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be LOW to initiate a write and either signal can terminate  
a write by going HIGH. The data input setup and hold timing should be referenced to the rising edge of the signal that terminates the write.  
16. These parameters are measured from the input signal changing, until the output pin goes to a high-impedance state.  
17. CY7C142/CY7C146 only.  
18. A write operation on Port A, where Port A has priority, leaves the data on Port B’s outputs undisturbed until one access time after one of the following:  
BUSY on Port B goes HIGH.  
Port B’s address toggled.  
CE for Port B is toggled.  
R/W for Port B is toggled during valid read.  
19. 52-pin PLCC and PQFP versions only.  
6

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