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74LVCE1G04SE-7 PDF预览

74LVCE1G04SE-7

更新时间: 2024-01-12 14:30:55
品牌 Logo 应用领域
美台 - DIODES 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
14页 272K
描述
SINGLE INVERTER GATE

74LVCE1G04SE-7 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-353
包装说明:TSSOP, TSSOP5/6,.08针数:5
Reach Compliance Code:compliantHTS代码:8542.39.00.01
Factory Lead Time:18 weeks风险等级:1.75
系列:LVC/LCX/ZJESD-30 代码:R-PDSO-G5
JESD-609代码:e3长度:2 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
最大I(ol):0.024 A湿度敏感等级:1
功能数量:1输入次数:1
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C输出特性:TOTEM POLE
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装等效代码:TSSOP5/6,.08封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法:TAPE AND REEL
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:3.4 ns传播延迟(tpd):7.5 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:1.1 mm子类别:Gates
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.4 V
标称供电电压 (Vsup):1.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:1.25 mm
Base Number Matches:1

74LVCE1G04SE-7 数据手册

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74LVCE1G04  
SINGLE INVERTER GATE  
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)  
Over recommended free-air temperature range (unless otherwise noted)  
Symbol  
Parameter  
Test Conditions  
IOH = -100μA  
IOH = -3mA  
IOH = -4mA  
IOH = -8mA  
IOH = -16mA  
IOH = -24mA  
IOH = -32mA  
IOL = 100μA  
IOL = 3mA  
Vcc  
1.4 V to 5.5V  
1.4 V  
Min  
VCC – 0.1  
1.05  
1.2  
Typ.  
Max  
Unit  
1.65 V  
High Level Output  
Voltage  
VOH  
2.3V  
1.9  
V
2.4  
3 V  
2.3  
4.5 V  
1.4 V to 5.5V  
1.4V  
3.8  
0.1  
.4  
IOL = 4mA  
1.65 V  
0.45  
0.3  
VOL  
High-level Input Voltage IOL = 8mA  
IOL = 16mA  
2.3V  
V
0.4  
3 V  
IOL = 24mA  
0.55  
0.55  
± 5  
IOL = 32mA  
4.5  
0 to 5.5 V  
0
II  
Input Current  
VI = 5.5 V or GND  
μA  
μA  
Power Down Leakage  
Current  
VI or VO = 5.5V  
IOFF  
± 10  
10  
VI = 5.5V of GND  
IO=0  
1.4 V to 5.5V  
ICC  
Ci  
Supply Current  
μA  
Input Capacitance  
Vi = VCC – or GND  
SOT25  
3.3  
3.5  
204  
371  
pF  
(Note 5)  
(Note 5)  
Thermal Resistance  
Junction-to-Ambient  
oC/W  
SOT353  
θJA  
DFN1410  
SOT25  
(Note 5)  
(Note 5)  
(Note 5)  
430  
52  
Thermal Resistance  
Junction-to-Case  
oC/W  
143  
θJC  
SOT353  
DFN1410  
(Note 5)  
190  
Note:  
5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum  
recommended pad layout.  
5 of 14  
www.diodes.com  
December 2010  
© Diodes Incorporated  
74LVCE1G04  
Document number: DS32212 Rev. 2 - 2  

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