Datasheet > 74HCT1G14GV-Q100

74HCT1G14GV-Q100

更新时间： 2024-02-02 22:19:32

品牌	Logo	应用领域
恩智浦 - NXP		输入元件光电二极管逻辑集成电路
页数	文件大小	规格书
16页	141K
描述
HCT SERIES, 1-INPUT INVERT GATE, PDSO5, PLASTIC, SC-74A, SOT-753, 5 PIN

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74HCT1G14GV-Q100 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	TSOP	包装说明：	PLASTIC, SC-74A, SOT-753, 5 PIN
针数：	5	Reach Compliance Code：	compliant
风险等级：	5.76	Base Number Matches：	1

74HCT1G14GV-Q100 数据手册

74HC1G14-Q100; 74HCT1G14-Q100

Inverting Schmitt trigger

Rev. 2 — 27 December 2012

Product data sheet

1. General description

74HC1G14-Q100 and 74HCT1G14-Q100 are high-speed Si-gate CMOS devices. They

provide an inverting buffer function with Schmitt trigger action. These devices are capable

of transforming slowly changing input signals into sharply defined, jitter-free output

signals.

The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

The HCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

The standard output currents are half of those of the 74HC14-Q100 and 74HCT14-Q100.

This product has been qualified to the Automotive Electronics Council (AEC) standard

Q100 (Grade 1) and is suitable for use in automotive applications.

2. Features and benefits

 Automotive product qualification in accordance with AEC-Q100 (Grade 1)

 Specified from 40 C to +85 C and from 40 C to +125 C

 Input levels:

 For 74HC1G14-Q100: CMOS level

 For 74HCT1G14-Q100: TTL level

 Symmetrical output impedance

 High noise immunity

 Low power dissipation

 Balanced propagation delays

 ESD protection:

 MIL-STD-883, method 3015 exceeds 2000 V

 HBM JESD22-A114F exceeds 2000 V

 MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )

 SOT353-1 and SOT753 package options

3. Applications

 Wave and pulse shapers

 Astable multivibrators

 Monostable multivibrators

12 3 4 5 6 7...16

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