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71WS256ND0BAWYJ2 PDF预览

71WS256ND0BAWYJ2

更新时间: 2024-02-23 05:52:01
品牌 Logo 应用领域
飞索 - SPANSION 内存集成电路
页数 文件大小 规格书
13页 331K
描述
Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84

71WS256ND0BAWYJ2 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:84
Reach Compliance Code:unknownHTS代码:8542.32.00.71
风险等级:5.84JESD-30 代码:R-PBGA-B84
长度:12 mm内存密度:134217728 bit
内存集成电路类型:MEMORY CIRCUIT内存宽度:16
功能数量:1端子数量:84
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM宽度:9 mm
Base Number Matches:1

71WS256ND0BAWYJ2 数据手册

 浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第2页浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第3页浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第4页浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第5页浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第6页浏览型号71WS256ND0BAWYJ2的Datasheet PDF文件第7页 
S71WS-N  
Stacked Multi-Chip Product (MCP)  
1.8 Volt-only Simultaneous Read/Write,  
Burst-mode Flash Memory with CellularRAM  
S71WS-N Cover Sheet  
Data Sheet  
Notice to Readers: This document states the current technical specifications regarding the Spansion  
product(s) described herein. Each product described herein may be designated as Advance Information,  
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.  
Publication Number S71WS-N_00  
Revision A  
Amendment 7  
Issue Date April 4, 2008  

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71WS256ND0BAWYK2 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BAWYK3 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BAWYM0 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BAWYM2 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BAWYM3 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BAWYP2 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BFWYH0 SPANSION

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Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BFWYH3 SPANSION

获取价格

Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BFWYJ3 SPANSION

获取价格

Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84
71WS256ND0BFWYK0 SPANSION

获取价格

Memory Circuit, 8MX16, CMOS, PBGA84, 12 X 9 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-84