5秒后页面跳转
7133LA35GI PDF预览

7133LA35GI

更新时间: 2023-03-15 00:00:00
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器
页数 文件大小 规格书
16页 137K
描述
Dual-Port SRAM, 2KX16, 35ns, CMOS, CPGA68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, CERAMIC, PGA-68

7133LA35GI 数据手册

 浏览型号7133LA35GI的Datasheet PDF文件第1页浏览型号7133LA35GI的Datasheet PDF文件第2页浏览型号7133LA35GI的Datasheet PDF文件第3页浏览型号7133LA35GI的Datasheet PDF文件第5页浏览型号7133LA35GI的Datasheet PDF文件第6页浏览型号7133LA35GI的Datasheet PDF文件第7页 
IDT7133SA/LA,IDT7143SA/LA  
High-Speed 2K x 16 Dual-Port RAM  
Military, Industrial and Commercial Temperature Ranges  
Absolute Maximum Ratings(1)  
Maximum Operating  
Temperature and Supply Voltage(1,2)  
Symbol  
Rating  
Commercial  
& Industrial  
Military  
Unit  
Grade  
Ambient  
Temperature  
GND  
Vcc  
(2)  
V
TERM  
Terminal Voltage  
with Respect  
to GND  
-0.5 to +7.0  
-0.5 to +7.0  
V
Military  
-55OC to +125OC  
0OC to +70OC  
0V  
0V  
0V  
5.0V  
+
+
+
10%  
Temperature  
Under Bias  
-55 to +125  
-65 to +150  
2.0  
-65 to +135  
-65 to +150  
2.0  
oC  
oC  
W
Commercial  
Industrial  
5.0V  
5.0V  
10%  
T
BIAS  
-40OC to +85OC  
10%  
Storage  
Temperature  
TSTG  
2746 tbl 04  
NOTES:  
1. This is the parameter TA. This is the "instant on" case temperature.  
(3)  
P
T
Power  
Dissipation  
DC Output  
Current  
50  
50  
mA  
IOUT  
2746 tbl 02  
NOTES:  
Recommended DC Operating  
Conditions  
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only and functional  
operation of the device at these or any other conditions above those indicated in  
the operational sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods may affect reliability.  
Symbol  
Parameter  
Supply Voltage  
GND Ground  
Min.  
Typ. Max. Unit  
VCC  
4.5  
5.0  
5.5  
0
V
V
V
2. VTERM must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns  
maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.  
0
0
____  
V
IH  
Input High Voltage  
Input Low Voltage  
2.2  
6.0(2)  
0.8  
____  
VIL  
-0.5(1)  
V
2746 tbl 05  
NOTES:  
Capacitance (TA = +25°C, f = 1.0mhz)  
1. VIL (min.) = -1.5V for pulse width less than 10ns.  
2. VTERM must not exceed Vcc + 10%.  
Symbol  
Parameter(1)  
Input Capacitance  
Output Capacitance  
Conditions(2)  
Max. Unit  
C
IN  
VIN = 3dV  
11  
11  
pF  
COUT  
VOUT = 3dV  
pF  
2746 tbl 03  
NOTES:  
1. This parameter is determined by device characterization but is not production  
tested.  
2. 3dVreferences the interpolatedcapacitance whenthe inputandoutputswitchfrom  
0V to 3V or from 3V to 0V.  
DC Electrical Characteristics Over the Operating  
Temperature and Supply Voltage Range (Either port, VCC = 5.0V ± 10%)  
7133SA  
7143SA  
7133LA  
7143LA  
Symbol  
|ILI  
|ILO  
Parameter  
Test Conditions  
Min.  
Max.  
Min.  
Max.  
Unit  
µA  
µA  
V
(1)  
___  
___  
|
Input Leakage Current  
V
CC = 5.5V, VIN = 0V to VCC  
10  
10  
5
5
___  
___  
___  
___  
___  
___  
|
Output Leakage Current  
Output Low Voltage (I/O  
CE = VIH, VOUT = 0V to VCC  
VOL  
0-I/O15  
)
IOL = 4mA  
0.4  
0.5  
0.4  
0.5  
Open Drain Output Low Voltage  
IOL = 16mA  
V
VOL  
(BUSY)  
___  
___  
VOH  
Output High Voltage  
IOH = -4mA  
2.4  
2.4  
V
2746 tbl 06  
NOTE:  
1. At Vcc < 2.0V, input leakages are undefined.  
6.42  
4

与7133LA35GI相关器件

型号 品牌 描述 获取价格 数据表
7133LA35JI IDT Dual-Port SRAM, 2KX16, 35ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC,

获取价格

7133LA45JB IDT Dual-Port SRAM, 2KX16, 45ns, CMOS, PQCC68, 0.950 X 0.950 INCH, 0.170 INCH HEIGHT, PLASTIC,

获取价格

7133LA45PF IDT Dual-Port SRAM, 2KX16, 45ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, TQFP-100

获取价格

7133LA45PN IDT Multi-Port SRAM, 2KX16, 45ns, CMOS, PQFP100

获取价格

7133LA55F IDT Dual-Port SRAM, 2KX16, 55ns, CMOS, CQFP68, 1.180 X 1.180 INCH, 0.160 INCH HEIGHT, FP-68

获取价格

7133LA55J8 IDT PLCC-68, Reel

获取价格