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70V3599S166BFG PDF预览

70V3599S166BFG

更新时间: 2024-01-26 21:55:48
品牌 Logo 应用领域
艾迪悌 - IDT 时钟静态存储器内存集成电路
页数 文件大小 规格书
23页 246K
描述
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

70V3599S166BFG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:CABGA
包装说明:LFBGA, BGA208,17X17,32针数:208
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.26
Samacsys Description:CHIP ARRAY BGA 15.0 X 15.0 MM X 0.8 MM P最长访问时间:12 ns
其他特性:PIPELINED OR FLOW-THROUGH ARCHITECTURE最大时钟频率 (fCLK):166 MHz
I/O 类型:COMMONJESD-30 代码:S-PBGA-B208
JESD-609代码:e1长度:15 mm
内存密度:4718592 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端口数量:2
端子数量:208字数:131072 words
字数代码:128000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LFBGA
封装等效代码:BGA208,17X17,32封装形状:SQUARE
封装形式:GRID ARRAY, LOW PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5/3.3,3.3 V
认证状态:Not Qualified座面最大高度:1.7 mm
最大待机电流:0.03 A最小待机电流:3.15 V
子类别:SRAMs最大压摆率:0.5 mA
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):3.15 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:15 mm

70V3599S166BFG 数据手册

 浏览型号70V3599S166BFG的Datasheet PDF文件第2页浏览型号70V3599S166BFG的Datasheet PDF文件第3页浏览型号70V3599S166BFG的Datasheet PDF文件第4页浏览型号70V3599S166BFG的Datasheet PDF文件第5页浏览型号70V3599S166BFG的Datasheet PDF文件第6页浏览型号70V3599S166BFG的Datasheet PDF文件第7页 
HIGH-SPEED 3.3V  
128/64K x 36  
SYNCHRONOUS  
DUAL-PORT STATIC RAM  
WITH 3.3V OR 2.5V INTERFACE  
IDT70V3599/89S  
Š
Features:  
True Dual-Port memory cells which allow simultaneous  
access of the same memory location  
Separate byte controls for multiplexed bus and bus  
matching compatibility  
High-speed data access  
Dual Cycle Deselect (DCD) for Pipelined Output mode  
LVTTL- compatible, 3.3V (±150mV) power supply  
for core  
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V  
(±100mV) power supply for I/Os and control signals on  
each port  
Industrial temperature range (-40°C to +85°C) is  
available at 133MHz.  
Available in a 208-pin Plastic Quad Flatpack (PQFP),  
208-pin fine pitch Ball Grid Array (fpBGA), and 256-pin Ball  
GridArray(BGA)  
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)  
– Industrial: 4.2ns (133MHz) (max.)  
Selectable Pipelined or Flow-Through output mode  
Counter enable and repeat features  
Dual chip enables allow for depth expansion without  
additional logic  
Full synchronous operation on both ports  
– 6ns cycle time, 166MHz operation (12Gbps bandwidth)  
– Fast 3.6ns clock to data out  
– 1.7ns setup to clock and 0.5ns hold on all control, data, and  
address inputs @ 166MHz  
– Data input, address, byte enable and control registers  
– Self-timedwriteallowsfastcycletime  
Supports JTAG features compliant with IEEE 1149.1  
Green parts available, see ordering information  
Functional Block Diagram  
BE3R  
BE3L  
BE2L  
BE1L  
BE0L  
BE2R  
BE1R  
BE0R  
FT/PIPE  
L
0a 1a  
a
0b 1b  
b
0c 1c  
c
0d 1d  
d
1d 0d  
d
1c 0c  
c
1b 0b  
b
1a 0a  
a
FT/PIPE  
R
1/0  
1/0  
R/WL  
R/WR  
CE0L  
CE0R  
1
1
CE1R  
CE1L  
0
0
B
W
0
B
W
1
B B  
B
B
B
B
1/0  
1/0  
W W W  
W
W W  
2
L
3
L
3
R
2
R
1
R
0
R
L
L
OE  
R
OE  
L
Dout0-8_L  
Dout0-8_R  
Dout9-17_R  
Dout18-26_R  
Dout27-35_R  
Dout9-17_L  
Dout18-26_L  
Dout27-35_L  
1d 0d 1c 0c  
1b 0b 1a 0a  
0a 1a 0b 1b  
0c 1c 0d 1d  
d c b a  
0/1  
0/1  
FT/PIPE  
L
FT/PIPER  
abcd  
128K x 36  
MEMORY  
ARRAY  
I/O0L - I/O35L  
I/O0R - I/O35R  
Din_L  
Din_R  
,
CLKR  
CLKL  
(1)  
(1)  
A
A
A
16L  
16R  
Counter/  
Address  
Reg.  
Counter/  
Address  
Reg.  
A
0L  
0R  
ADDR_R  
ADDR_L  
REPEAT  
ADS  
CNTEN  
L
REPEAT  
ADS  
CNTEN  
R
R
L
R
L
5617 tbl 01  
TDI  
TCK  
TMS  
TRST  
JTAG  
TDO  
NOTE:  
1. A16 is a NC for IDT70V3589.  
OCTOBER 2014  
1
DSC 5617/10  
©20104 Integrated Device Technology, Inc.  

70V3599S166BFG 替代型号

型号 品牌 替代类型 描述 数据表
70V3599S166BFG8 IDT

完全替代

HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM

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