是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | QFP, QFP208,1.2SQ,20 |
Reach Compliance Code: | compliant | 风险等级: | 5.25 |
最长访问时间: | 4.2 ns | 最大时钟频率 (fCLK): | 133 MHz |
I/O 类型: | COMMON | JESD-30 代码: | S-PQFP-G208 |
JESD-609代码: | e3 | 内存密度: | 2359296 bit |
内存集成电路类型: | DUAL-PORT SRAM | 内存宽度: | 36 |
湿度敏感等级: | 3 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 208 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 64KX36 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QFP | 封装等效代码: | QFP208,1.2SQ,20 |
封装形状: | SQUARE | 封装形式: | FLATPACK |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 2.5,2.5/3.3 V | 认证状态: | Not Qualified |
最大待机电流: | 0.015 A | 最小待机电流: | 2.4 V |
子类别: | SRAMs | 最大压摆率: | 0.37 mA |
最大供电电压 (Vsup): | 2.6 V | 最小供电电压 (Vsup): | 2.4 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子节距: | 0.5 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
70T3589S133DRGI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3589S133DRGI8 | IDT |
获取价格 |
Multi-Port SRAM, 64KX36, 15ns, CMOS, PQFP208 | |
70T3589S133DRI8 | IDT |
获取价格 |
Multi-Port SRAM, 64KX36, 15ns, CMOS, PQFP208 | |
70T3589S166BCG | IDT |
获取价格 |
Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN | |
70T3589S166BCG8 | IDT |
获取价格 |
Application Specific SRAM, 64KX36, 12ns, CMOS, PBGA256 | |
70T3589S166BCGI | IDT |
获取价格 |
Dual-Port SRAM, 64KX36, 12ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, GREEN | |
70T3589S166BCGI8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3589S166BFG | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3589S166BFG8 | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM | |
70T3589S166BFGI | IDT |
获取价格 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM |