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7024 PDF预览

7024

更新时间: 2023-12-20 18:44:44
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
23页 336K
描述
4K x 16 Dual-Port RAM

7024 数据手册

 浏览型号7024的Datasheet PDF文件第5页浏览型号7024的Datasheet PDF文件第6页浏览型号7024的Datasheet PDF文件第7页浏览型号7024的Datasheet PDF文件第9页浏览型号7024的Datasheet PDF文件第10页浏览型号7024的Datasheet PDF文件第11页 
7024S/L  
High-Speed 4K x 16 Dual-Port Static RAM  
Military, Industrial and Commercial Temperature Ranges  
AC Electrical Characteristics Over the  
OperatingTemperatureandSupplyVoltageRange(4)  
7024X15  
7024X17  
7024X20  
Com'l, Ind  
& Military  
7024X25  
Com'l &  
Military  
Com'l Only  
Com'l Only  
Symbol  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
READ CYCLE  
____  
____  
____  
____  
t
RC  
AA  
ACE  
ABE  
AOE  
OH  
LZ  
HZ  
PU  
PD  
SOP  
SAA  
Read Cycle Time  
15  
17  
20  
25  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
____  
____  
____  
____  
t
Address Access Time  
15  
15  
15  
17  
17  
17  
20  
20  
20  
25  
25  
25  
Chip Enable Access Time(3)  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
t
Byte Enable Access Time(3)  
t
Output Enable Access Time  
10  
10  
12  
13  
____  
____  
____  
____  
t
Output Hold from Address Change  
Output Low-Z Time(1,2)  
3
3
3
3
____  
____  
____  
____  
t
3
3
3
3
Output High-Z Time(1,2)  
10  
10  
12  
15  
____  
____  
____  
____  
t
t
Chip Enable to Power Up Time(1,2)  
Chip Disable to Power Down Time(1,2)  
Semaphore Flag Update Pulse (OE or SEM)  
Semaphore Address Access(3)  
0
0
0
0
____  
____  
____  
____  
____  
____  
____  
____  
t
15  
17  
20  
25  
____  
____  
____  
____  
t
10  
10  
10  
10  
____  
____  
____  
____  
t
15  
17  
20  
25  
ns  
2740 tbl 12a  
7024X35  
Com'l &  
Military  
7024X55  
Com'l, Ind  
& Military  
7024X70  
Military Only  
Symbol  
READ CYCLE  
Parameter  
Min.  
Max.  
Min.  
Max.  
Min.  
Max.  
Unit  
____  
____  
____  
t
RC  
AA  
ACE  
ABE  
AOE  
OH  
LZ  
HZ  
PU  
PD  
SOP  
SAA  
Read Cycle Time  
35  
55  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
____  
____  
____  
t
Address Access Time  
35  
35  
35  
55  
55  
55  
70  
70  
70  
Chip Enable Access Time(3)  
Byte Enable Access Time(3)  
Output Enable Access Time  
Output Hold from Address Change  
Output Low-Z Time(1,2)  
____  
____  
____  
____  
____  
____  
____  
____  
____  
t
t
t
20  
30  
35  
____  
____  
____  
t
3
3
3
____  
____  
____  
t
3
3
3
Output High-Z Time(1,2)  
15  
25  
30  
____  
____  
____  
t
t
Chip Enable to Power Up Time (1,2)  
Chip Disable to Power Down Time(1,2)  
Semaphore Flag Update Pulse (OE or SEM)  
Semaphore Address Access(3)  
0
0
0
____  
____  
____  
____  
____  
____  
t
35  
50  
50  
____  
____  
____  
t
15  
15  
15  
____  
____  
____  
t
35  
55  
70  
ns  
2740 tbl 12b  
NOTES:  
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).  
2. This parameter is guaranteed by device characterization, but is not production tested.  
3. To access RAM, CE = VIL, UB or LB = VIL, and SEM =VIH. To access semaphore, CE = VIH or UB & LB = VIH, and SEM =VIL.  
4. 'X' in part number indicates power rating (S or L).  
6.842  
Feb.20.20  

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