Datasheet > 7007L25JB8

7007L25JB8

更新时间： 2023-01-02 14:40:41

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
21页	164K
描述
Multi-Port SRAM, 32KX8, 25ns, CMOS, PQCC68

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7007L25JB8 数据手册

IDT7007S/L

High-Speed 32K x 8 Dual-Port Static RAM

Military, Industrial and Commercial Temperature Ranges

Truth Table I: Non-Contention Read/Write Control

Inputs⁽¹⁾

R/W

Outputs

I/O^0-7

Mode

SEM

High-Z

DATAIN

Deselected: Power-Down

Write to Memory

DATA^OUTRead Memory

High-Z Outputs Disabled

2940 tbl 02

NOTE:

1. A^0L— A14L ≠ A0R — A14R

Truth Table II: Semaphore Read/Write Control⁽¹⁾

Inputs

Outputs

R/W

I/O^0-7

Mode

-I/O

SEM

DATAOUT Read Semaphore Flag Data Out (I/O

↑

DATAIN

Write I/O

0 into Semaphore Flag

______

Not Allowed

2940 tbl 03

NOTE:

1. There are eight semaphore flags written to via I/O⁰and read from all I/O's. These eight semaphores are addressed by A0 - A2.

AbsoluteMaximumRatings⁽¹⁾

MaximumOperatingTemperature

andSupplyVoltage⁽¹⁾

Symbol

Rating

Commercial

& Industrial

Military

Unit

Ambient

(2)

Grade

Temperature

-55^OC to+125^OC

0^OC to +70^OC

-40^OC to +85^OC

GND

Vcc

TERM

Terminal Voltage

with Respect

to GND

-0.5 to +7.0

Military

5.0V

10%

Te mp e rature

Under Bias

-55 to +125

-65 to +150

-65 to +135

-65 to +150

^oC

Commercial

Industrial

5.0V

BIAS

10%

Storage

Te mp e rature

TSTG

2940 tbl 05

NOTES:

1. This is the parameter T^A. This is the "instant on" case temperature.

IOUT

DC Output

Current

2940 tbl 04

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS

RecommendedDCOperating

Conditions

may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sec-tions of this specification is not implied. Exposure

to absolute maxi-mum rating conditions for extended periods may affect

reliability.

Symbol

Parameter

Supply Voltage

GND Ground

Min.

Typ.

Max. Unit

VCC

4.5

5.0

5.5

2. V^TERMmust not exceed Vcc + 10% for more than 25% of the cycle time or 10ns

maximum, and is limited to < 20mA for the period of VTERM > Vcc + 10%.

(2)

____

Input High Voltage

Input Low Voltage

2.2

6.0

Capacitance(TA = +25°C, f = 1.0Mhz)

VIL

-0.5⁽¹⁾

0.8

____

Symbol

Parameter⁽¹⁾

Input Capacitance

Output Capacitance

Conditions⁽²⁾

Max.

Unit

2940 tbl 06

NOTES:

CIN

VIN = 3dV

1. V^IL> -1.5V for pulse width less than 10ns.

2. V^TERMmust not exceed Vcc + 10%.

COUT

VOUT = 3dV

2940 tbl 07

NOTES:

1. This parameter is determined by device characterization but is not production

tested. TQFP package only.

2. 3dV represents the interpolated capacitance when the input and output signals

switch from 0V to 3V or from 3V to 0V.

1 2 3 456 7 8...21

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